In-situ fabrication of GaN/short-range ordered BN heterostructure light-emitting diodes

In-situ fabrication of GaN/short-range ordered BN heterostructure light-emitting diodes

Abstract We fabricated GaN/BN double heterostructure light-emitting diodes (LEDs) where the BN layer exhibited an amorphous-like short-range order and facilitated the in-situ epitaxial lateral overgrowth (ELOG) of GaN films. Using an identical metal-organic chemical vapor deposition, the BN layer wa...

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Main Authors: Heesoo Kim, Anh Thi Dieu Nguyen, Beomjun Kim, Hyerin Jo, Imasda Rahmatulloh, Hyobin Yoo, Hongseok Oh, Aziz Ahmed, Hyeonjun Beak, Kunook Chung
Format: Article
Language:English
Published: Nature Portfolio 2025-03-01
Series:NPG Asia Materials
Online Access:https://doi.org/10.1038/s41427-025-00594-8
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https://doi.org/10.1038/s41427-025-00594-8

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