A Comparative Analysis of Laser-Ablated Surface Characteristics Between the Si Face and C Face of Silicon Carbide Substrates

A Comparative Analysis of Laser-Ablated Surface Characteristics Between the Si Face and C Face of Silicon Carbide Substrates

Silicon carbide (SiC) has significant potential as a third-generation semiconductor material due to its exceptional thermal and electronic properties, yet its high hardness and brittleness make processing costly and complex. This study introduces ultraviolet laser ablation as a method for direct SiC...

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Bibliographic Details
Main Authors: Hsin-Yi Tsai, Yu-Hsuan Lin, Kuo-Cheng Huang, J. Andrew Yeh, Yi Yang, Chien-Fang Ding
Format: Article
Language:English
Published: MDPI AG 2025-01-01
Series:Micromachines
Subjects:
silicon carbide (SiC)
ultraviolet laser
hardness
surface roughness
oxidation
Online Access:https://www.mdpi.com/2072-666X/16/1/62
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