In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors
Reflectance anisotropy/difference spectroscopy (RAS/RDS) had been developed for monitoring epitaxial semiconductor growth, especially for the metal-organic chemical vapor deposition (MOCVD) of III/V semiconductors. But RAS is also well suited for the control of III/V growth with molecular beam epita...
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Wiley
2023-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2023/1319081 |
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| author | Henning Fouckhardt Johannes Richter Christoph Doering Johannes Strassner |
| author_facet | Henning Fouckhardt Johannes Richter Christoph Doering Johannes Strassner |
| author_sort | Henning Fouckhardt |
| collection | DOAJ |
| description | Reflectance anisotropy/difference spectroscopy (RAS/RDS) had been developed for monitoring epitaxial semiconductor growth, especially for the metal-organic chemical vapor deposition (MOCVD) of III/V semiconductors. But RAS is also well suited for the control of III/V growth with molecular beam epitaxy (MBE). Although the work on RAS has already started at least three decades ago, the potential of this in situ and real-time monitoring technique, especially for doping control, is not well known yet. Experimental results are given here on the identification of doping types and concentration during MBE growth, exemplarily for GaAs and AlGaAs. Especially, the dependence of the majority charge carrier concentration (i.e., the doping concentration) on the RAS signal difference between the nondoping and doping cases is addressed here. |
| format | Article |
| id | doaj-art-cd1241f7ad484f93ab9efaa6f7d6fd18 |
| institution | OA Journals |
| issn | 1687-8442 |
| language | English |
| publishDate | 2023-01-01 |
| publisher | Wiley |
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| series | Advances in Materials Science and Engineering |
| spelling | doaj-art-cd1241f7ad484f93ab9efaa6f7d6fd182025-08-20T02:19:53ZengWileyAdvances in Materials Science and Engineering1687-84422023-01-01202310.1155/2023/1319081In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V SemiconductorsHenning Fouckhardt0Johannes Richter1Christoph Doering2Johannes Strassner3Integrated Optoelectronics and Microoptics Research GroupIntegrated Optoelectronics and Microoptics Research GroupIntegrated Optoelectronics and Microoptics Research GroupIntegrated Optoelectronics and Microoptics Research GroupReflectance anisotropy/difference spectroscopy (RAS/RDS) had been developed for monitoring epitaxial semiconductor growth, especially for the metal-organic chemical vapor deposition (MOCVD) of III/V semiconductors. But RAS is also well suited for the control of III/V growth with molecular beam epitaxy (MBE). Although the work on RAS has already started at least three decades ago, the potential of this in situ and real-time monitoring technique, especially for doping control, is not well known yet. Experimental results are given here on the identification of doping types and concentration during MBE growth, exemplarily for GaAs and AlGaAs. Especially, the dependence of the majority charge carrier concentration (i.e., the doping concentration) on the RAS signal difference between the nondoping and doping cases is addressed here.http://dx.doi.org/10.1155/2023/1319081 |
| spellingShingle | Henning Fouckhardt Johannes Richter Christoph Doering Johannes Strassner In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors Advances in Materials Science and Engineering |
| title | In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors |
| title_full | In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors |
| title_fullStr | In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors |
| title_full_unstemmed | In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors |
| title_short | In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors |
| title_sort | in situ and real time monitoring of doping levels by reflectance anisotropy spectroscopy ras during molecular beam epitaxial mbe growth of iii v semiconductors |
| url | http://dx.doi.org/10.1155/2023/1319081 |
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