In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors
Reflectance anisotropy/difference spectroscopy (RAS/RDS) had been developed for monitoring epitaxial semiconductor growth, especially for the metal-organic chemical vapor deposition (MOCVD) of III/V semiconductors. But RAS is also well suited for the control of III/V growth with molecular beam epita...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2023-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2023/1319081 |
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