APA (7th ed.) Citation

Fouckhardt, H., Richter, J., Doering, C., & Strassner, J. In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors. Wiley.

Chicago Style (17th ed.) Citation

Fouckhardt, Henning, Johannes Richter, Christoph Doering, and Johannes Strassner. In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) During Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors. Wiley.

MLA (9th ed.) Citation

Fouckhardt, Henning, et al. In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) During Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors. Wiley.