Research on Junction Temperature Smooth Control of SiC MOSFET Based on Body Diode Conduction Loss Adjustment

Research on Junction Temperature Smooth Control of SiC MOSFET Based on Body Diode Conduction Loss Adjustment

In a converter of actual working condition, the change in the current and voltage of the power device will cause the junction temperature to fluctuate greatly. This device is subjected to high thermal stress due to the change in the junction temperature. Therefore, it is necessary to adopt junction...

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Bibliographic Details
Main Authors: Junke Wu, Yunpeng Wei, Yuntao Wu, Zhou Wang, Xingyu Li, Xiangnan Wei
Format: Article
Language:English
Published: MDPI AG 2024-12-01
Series:Energies
Subjects:
SiC MOSFET
power semiconductor
junction temperature smoothing control
electric vehicle motor drive inverter
body diode
conduction loss
Online Access:https://www.mdpi.com/1996-1073/17/23/6175
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