Low Power Emission Pulse Generation Circuit Based on n-Type Amorphous In-Ga-Zn-Oxide Transistors for Active-Matrix Organic Light-Emitting Diode Displays
This paper presents a low power emission (EM) pulse generation circuit using n-type amorphous In-Ga-Zn-Oxide (a-IGZO) semiconductor thin-film transistors (TFTs). The low power consumption is achieved by avoiding the shoot-through current paths through an optimized inverter circuit. The proposed circ...
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2024-10-01
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| author | Min-Kyu Chang Ji Hoon Kim Hyoungsik Nam |
| author_facet | Min-Kyu Chang Ji Hoon Kim Hyoungsik Nam |
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| description | This paper presents a low power emission (EM) pulse generation circuit using n-type amorphous In-Ga-Zn-Oxide (a-IGZO) semiconductor thin-film transistors (TFTs). The low power consumption is achieved by avoiding the shoot-through current paths through an optimized inverter circuit. The proposed circuit consists of 12 TFTs and 2 capacitors including 6 TFTs and 1 capacitor for the inverter circuit to control the pulling-down TFTs. In addition, the wider variance range of the threshold voltage (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi mathvariant="normal">V</mi><mi>th</mi></msub></semantics></math></inline-formula>) from <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mo>−</mo><mn>4</mn></mrow></semantics></math></inline-formula> V to <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>2.5</mn></mrow></semantics></math></inline-formula> V is covered by additional 6 TFTs for series-connected two transistor (STT) schemes and two low supply voltages to take into account the negative <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi mathvariant="normal">V</mi><mi>th</mi></msub></semantics></math></inline-formula> of depletion-mode TFTs. The simulation of 30 EM circuits is conducted over a 6.1-inch active-matrix organic light-emitting diode display of 120 Hz refresh rate and 3840 × 2160 (UHD) resolution. The power consumption of the EM circuit with the proposed inverter is measured at the low values from 0.836 mW to 0.568 mW over pulse widths from 3 to 2157 horizontal times. It is ensured that the proposed circuit achieves the low power consumption regardless of pulse widths. |
| format | Article |
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| institution | DOAJ |
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| language | English |
| publishDate | 2024-10-01 |
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| series | Micromachines |
| spelling | doaj-art-cbf0a7df23b14fd8b61f72b8bf4f9e052025-08-20T02:48:01ZengMDPI AGMicromachines2072-666X2024-10-011511133010.3390/mi15111330Low Power Emission Pulse Generation Circuit Based on n-Type Amorphous In-Ga-Zn-Oxide Transistors for Active-Matrix Organic Light-Emitting Diode DisplaysMin-Kyu Chang0Ji Hoon Kim1Hyoungsik Nam2Department of Information Display, Kyung Hee University, Seoul 02447, Republic of KoreaDepartment of Information Display, Kyung Hee University, Seoul 02447, Republic of KoreaDepartment of Information Display, Kyung Hee University, Seoul 02447, Republic of KoreaThis paper presents a low power emission (EM) pulse generation circuit using n-type amorphous In-Ga-Zn-Oxide (a-IGZO) semiconductor thin-film transistors (TFTs). The low power consumption is achieved by avoiding the shoot-through current paths through an optimized inverter circuit. The proposed circuit consists of 12 TFTs and 2 capacitors including 6 TFTs and 1 capacitor for the inverter circuit to control the pulling-down TFTs. In addition, the wider variance range of the threshold voltage (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi mathvariant="normal">V</mi><mi>th</mi></msub></semantics></math></inline-formula>) from <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mo>−</mo><mn>4</mn></mrow></semantics></math></inline-formula> V to <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>2.5</mn></mrow></semantics></math></inline-formula> V is covered by additional 6 TFTs for series-connected two transistor (STT) schemes and two low supply voltages to take into account the negative <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi mathvariant="normal">V</mi><mi>th</mi></msub></semantics></math></inline-formula> of depletion-mode TFTs. The simulation of 30 EM circuits is conducted over a 6.1-inch active-matrix organic light-emitting diode display of 120 Hz refresh rate and 3840 × 2160 (UHD) resolution. The power consumption of the EM circuit with the proposed inverter is measured at the low values from 0.836 mW to 0.568 mW over pulse widths from 3 to 2157 horizontal times. It is ensured that the proposed circuit achieves the low power consumption regardless of pulse widths.https://www.mdpi.com/2072-666X/15/11/1330low poweremission pulseinvertera-IGZO TFTdepletion-modeshoot-through current path |
| spellingShingle | Min-Kyu Chang Ji Hoon Kim Hyoungsik Nam Low Power Emission Pulse Generation Circuit Based on n-Type Amorphous In-Ga-Zn-Oxide Transistors for Active-Matrix Organic Light-Emitting Diode Displays Micromachines low power emission pulse inverter a-IGZO TFT depletion-mode shoot-through current path |
| title | Low Power Emission Pulse Generation Circuit Based on n-Type Amorphous In-Ga-Zn-Oxide Transistors for Active-Matrix Organic Light-Emitting Diode Displays |
| title_full | Low Power Emission Pulse Generation Circuit Based on n-Type Amorphous In-Ga-Zn-Oxide Transistors for Active-Matrix Organic Light-Emitting Diode Displays |
| title_fullStr | Low Power Emission Pulse Generation Circuit Based on n-Type Amorphous In-Ga-Zn-Oxide Transistors for Active-Matrix Organic Light-Emitting Diode Displays |
| title_full_unstemmed | Low Power Emission Pulse Generation Circuit Based on n-Type Amorphous In-Ga-Zn-Oxide Transistors for Active-Matrix Organic Light-Emitting Diode Displays |
| title_short | Low Power Emission Pulse Generation Circuit Based on n-Type Amorphous In-Ga-Zn-Oxide Transistors for Active-Matrix Organic Light-Emitting Diode Displays |
| title_sort | low power emission pulse generation circuit based on n type amorphous in ga zn oxide transistors for active matrix organic light emitting diode displays |
| topic | low power emission pulse inverter a-IGZO TFT depletion-mode shoot-through current path |
| url | https://www.mdpi.com/2072-666X/15/11/1330 |
| work_keys_str_mv | AT minkyuchang lowpoweremissionpulsegenerationcircuitbasedonntypeamorphousingaznoxidetransistorsforactivematrixorganiclightemittingdiodedisplays AT jihoonkim lowpoweremissionpulsegenerationcircuitbasedonntypeamorphousingaznoxidetransistorsforactivematrixorganiclightemittingdiodedisplays AT hyoungsiknam lowpoweremissionpulsegenerationcircuitbasedonntypeamorphousingaznoxidetransistorsforactivematrixorganiclightemittingdiodedisplays |