Low Power Emission Pulse Generation Circuit Based on n-Type Amorphous In-Ga-Zn-Oxide Transistors for Active-Matrix Organic Light-Emitting Diode Displays

Low Power Emission Pulse Generation Circuit Based on n-Type Amorphous In-Ga-Zn-Oxide Transistors for Active-Matrix Organic Light-Emitting Diode Displays

This paper presents a low power emission (EM) pulse generation circuit using n-type amorphous In-Ga-Zn-Oxide (a-IGZO) semiconductor thin-film transistors (TFTs). The low power consumption is achieved by avoiding the shoot-through current paths through an optimized inverter circuit. The proposed circ...

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Bibliographic Details
Main Authors: Min-Kyu Chang, Ji Hoon Kim, Hyoungsik Nam
Format: Article
Language:English
Published: MDPI AG 2024-10-01
Series:Micromachines
Subjects:
low power
emission pulse
inverter
a-IGZO TFT
depletion-mode
shoot-through current path
Online Access:https://www.mdpi.com/2072-666X/15/11/1330
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