GaN HEMTs-based compact power factor corrected 96.1% peak efficiency LED driver with gate assisted circuit
Abstract LED drivers of present day demand high power factor (PF), high power efficiency, low total harmonic distortion, very low electromagnetic interference and high reliability but still struggling with low operating frequency and voltage, low efficiency, large size, lack of fully soft switching,...
Saved in:
| Main Authors: | Muhammad Faizan, Zhengfang Qian, Hua Zhu, Shuting Fan, Muhammad Zain Yousaf, Mohit Bajaj, Chen Zhichu, Asad Aziz |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-04-01
|
| Series: | Scientific Reports |
| Subjects: | |
| Online Access: | https://doi.org/10.1038/s41598-025-92341-w |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
3 kV monolithic bidirectional GaN HEMT on sapphire
by: Md Tahmidul Alam, et al.
Published: (2025-01-01) -
High-Power, High-Repetition Short-Pulse Laser Driver Using Direct-Drive D-Mode GaN HEMT
by: Ching-Yao Liu, et al.
Published: (2025-01-01) -
Novel Bidirectional ESD Circuit for GaN HEMT
by: Pengfei Zhang, et al.
Published: (2025-01-01) -
Photocontrolled Terahertz Amplified Modulator via Plasma Wave Excitation in ORTD-Gated HEMTs
by: Changju Zhu, et al.
Published: (2017-01-01) -
Preparation and Characterization of GaN-on-Si HEMTs with Nanocrystalline Diamond Passivation
by: Yu Fu, et al.
Published: (2025-02-01)