GaN HEMTs-based compact power factor corrected 96.1% peak efficiency LED driver with gate assisted circuit

GaN HEMTs-based compact power factor corrected 96.1% peak efficiency LED driver with gate assisted circuit

Abstract LED drivers of present day demand high power factor (PF), high power efficiency, low total harmonic distortion, very low electromagnetic interference and high reliability but still struggling with low operating frequency and voltage, low efficiency, large size, lack of fully soft switching,...

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Bibliographic Details
Main Authors: Muhammad Faizan, Zhengfang Qian, Hua Zhu, Shuting Fan, Muhammad Zain Yousaf, Mohit Bajaj, Chen Zhichu, Asad Aziz
Format: Article
Language:English
Published: Nature Portfolio 2025-04-01
Series:Scientific Reports
Subjects:
Wide bandgap devices
Mitigation of shoot-through and switching oscillations
Fully soft switching
GaN HEMTs
LED driver
Power efficiency
Online Access:https://doi.org/10.1038/s41598-025-92341-w
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https://doi.org/10.1038/s41598-025-92341-w

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