GaN HEMTs-based compact power factor corrected 96.1% peak efficiency LED driver with gate assisted circuit
Abstract LED drivers of present day demand high power factor (PF), high power efficiency, low total harmonic distortion, very low electromagnetic interference and high reliability but still struggling with low operating frequency and voltage, low efficiency, large size, lack of fully soft switching,...
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Nature Portfolio
2025-04-01
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| Series: | Scientific Reports |
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| Online Access: | https://doi.org/10.1038/s41598-025-92341-w |
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| author | Muhammad Faizan Zhengfang Qian Hua Zhu Shuting Fan Muhammad Zain Yousaf Mohit Bajaj Chen Zhichu Asad Aziz |
| author_facet | Muhammad Faizan Zhengfang Qian Hua Zhu Shuting Fan Muhammad Zain Yousaf Mohit Bajaj Chen Zhichu Asad Aziz |
| author_sort | Muhammad Faizan |
| collection | DOAJ |
| description | Abstract LED drivers of present day demand high power factor (PF), high power efficiency, low total harmonic distortion, very low electromagnetic interference and high reliability but still struggling with low operating frequency and voltage, low efficiency, large size, lack of fully soft switching, low reliability, high cost, shoot-through and switching oscillations. In this paper, an LED driver is presented for high input voltage with low bus voltage that features very low noise, low total harmonic distortion (THD), high PF and high power efficiency by using fully soft switching mechanism, i.e. the negligible switching losses. The driver is based on two boundary conduction mode (BCM) boost circuits with common inductor that perform natural power factor correction and enhance the reliability of proposed driver. For mitigation of switching oscillations and shoot-through, a novel gate assisted circuit (GAC) is embedding by performing the mathematical analysis and modeling for shoot-through in half bridge configuration. Furthermore, the proposed driver transformer has two independent secondary windings with coupled inductor to independently drive two separate strings of LEDs. The experimental results demonstrated THD of 11.2%, PF as high as 0.99, 96.1% peak power efficiency under full load, bus voltage 410 V, fully soft switching with very small noise. |
| format | Article |
| id | doaj-art-cb92cf02df5c4978bf1a33709a8008bc |
| institution | DOAJ |
| issn | 2045-2322 |
| language | English |
| publishDate | 2025-04-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj-art-cb92cf02df5c4978bf1a33709a8008bc2025-08-20T03:13:57ZengNature PortfolioScientific Reports2045-23222025-04-0115112810.1038/s41598-025-92341-wGaN HEMTs-based compact power factor corrected 96.1% peak efficiency LED driver with gate assisted circuitMuhammad Faizan0Zhengfang Qian1Hua Zhu2Shuting Fan3Muhammad Zain Yousaf4Mohit Bajaj5Chen Zhichu6Asad Aziz7Key Laboratory of Optoelectronic Devices and System of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen UniversityKey Laboratory of Optoelectronic Devices and System of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen UniversityKey Laboratory of Optoelectronic Devices and System of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen UniversityKey Laboratory of Optoelectronic Devices and System of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen UniversityCenter for Renewable Energy and Microgrids, Huanjiang Laboratory, Zhejiang UniversityDepartment of Electrical Engineering, Graphic Era (Deemed to be University)Center for Renewable Energy and Microgrids, Huanjiang Laboratory, Zhejiang UniversityKey Laboratory of Optoelectronic Devices and System of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen UniversityAbstract LED drivers of present day demand high power factor (PF), high power efficiency, low total harmonic distortion, very low electromagnetic interference and high reliability but still struggling with low operating frequency and voltage, low efficiency, large size, lack of fully soft switching, low reliability, high cost, shoot-through and switching oscillations. In this paper, an LED driver is presented for high input voltage with low bus voltage that features very low noise, low total harmonic distortion (THD), high PF and high power efficiency by using fully soft switching mechanism, i.e. the negligible switching losses. The driver is based on two boundary conduction mode (BCM) boost circuits with common inductor that perform natural power factor correction and enhance the reliability of proposed driver. For mitigation of switching oscillations and shoot-through, a novel gate assisted circuit (GAC) is embedding by performing the mathematical analysis and modeling for shoot-through in half bridge configuration. Furthermore, the proposed driver transformer has two independent secondary windings with coupled inductor to independently drive two separate strings of LEDs. The experimental results demonstrated THD of 11.2%, PF as high as 0.99, 96.1% peak power efficiency under full load, bus voltage 410 V, fully soft switching with very small noise.https://doi.org/10.1038/s41598-025-92341-wWide bandgap devicesMitigation of shoot-through and switching oscillationsFully soft switchingGaN HEMTsLED driverPower efficiency |
| spellingShingle | Muhammad Faizan Zhengfang Qian Hua Zhu Shuting Fan Muhammad Zain Yousaf Mohit Bajaj Chen Zhichu Asad Aziz GaN HEMTs-based compact power factor corrected 96.1% peak efficiency LED driver with gate assisted circuit Scientific Reports Wide bandgap devices Mitigation of shoot-through and switching oscillations Fully soft switching GaN HEMTs LED driver Power efficiency |
| title | GaN HEMTs-based compact power factor corrected 96.1% peak efficiency LED driver with gate assisted circuit |
| title_full | GaN HEMTs-based compact power factor corrected 96.1% peak efficiency LED driver with gate assisted circuit |
| title_fullStr | GaN HEMTs-based compact power factor corrected 96.1% peak efficiency LED driver with gate assisted circuit |
| title_full_unstemmed | GaN HEMTs-based compact power factor corrected 96.1% peak efficiency LED driver with gate assisted circuit |
| title_short | GaN HEMTs-based compact power factor corrected 96.1% peak efficiency LED driver with gate assisted circuit |
| title_sort | gan hemts based compact power factor corrected 96 1 peak efficiency led driver with gate assisted circuit |
| topic | Wide bandgap devices Mitigation of shoot-through and switching oscillations Fully soft switching GaN HEMTs LED driver Power efficiency |
| url | https://doi.org/10.1038/s41598-025-92341-w |
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