Thin film field-effect transistor with ZnO:Li ferroelectric channel
An n-type channel transparent thin film field-effect transistor (FET) using a top-gate configuration on a sapphire substrate is presented. ZnO:Li film was used as a channel, and MgF2 film as a gate insulator. Measurements showed that ZnO:Li films are ferroelectrics with spontaneous polarization [For...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
World Scientific Publishing
2025-02-01
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| Series: | Journal of Advanced Dielectrics |
| Subjects: | |
| Online Access: | https://www.worldscientific.com/doi/10.1142/S2010135X24500097 |
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