Proton-Irradiation Effects and Reliability on GaN-Based MIS-HEMTs
A comprehensive study of proton irradiation reliability on a bilayer dielectrics SiN<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub> MIS-HEMT, the common Schottky gate HEMT, and a single dielectric layer MIS-HEMT with SiN<sub>x</sub> and with Al<sub>2<...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-08-01
|
| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/15/9/1091 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|