Aluminum-Nitride-Based Semiconductors: Growth Processes, Ferroelectric Properties, and Performance Enhancements
Aluminum nitride (AlN)-based ferroelectric films offer significant advantages, including compatibility with CMOS back-end processes, potential for sustainable miniaturization, and intrinsic stability in the ferroelectric phase. As promising emerging materials, they have attracted considerable attent...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-01-01
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| Series: | Inorganics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2304-6740/13/2/29 |
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