Mid-Infrared High-Power InGaAsSb/AlGaInAsSb Multiple-Quantum-Well Laser Diodes Around 2.9 μm

Mid-Infrared High-Power InGaAsSb/AlGaInAsSb Multiple-Quantum-Well Laser Diodes Around 2.9 μm

Antimonide laser diodes, with their high performance above room temperature, exhibit significant potential for widespread applications in the mid-infrared spectral region. However, the laser’s performance significantly degrades as the emission wavelength increases, primarily due to severe quantum-we...

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Bibliographic Details
Main Authors: Hongguang Yu, Chengao Yang, Yihang Chen, Jianmei Shi, Juntian Cao, Zhengqi Geng, Zhiyuan Wang, Haoran Wen, Enquan Zhang, Yu Zhang, Hao Tan, Donghai Wu, Yingqiang Xu, Haiqiao Ni, Zhichuan Niu
Format: Article
Language:English
Published: MDPI AG 2025-01-01
Series:Nanomaterials
Subjects:
miscibility gap
interdiffusion process
molecular epitaxy beam
antimonide laser diodes
mid-infrared emitters
Online Access:https://www.mdpi.com/2079-4991/15/2/139
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