Numerical analysis of the use of multiple inlet plates to improve the thickness uniformity of silicon epitaxial layers during atmospheric pressure chemical vapor deposition
The further reduction of semiconductor nanometer line width has led to increasingly higher silicon epitaxial film surface flatness requirement. This study conducts a series of numerical simulations to examine the use of multiple inlet plates in an atmospheric pressure chemical vapor deposition (APCV...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2024-12-01
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| Series: | Results in Engineering |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2590123024019315 |
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