Optimising (Al,Ga) (As,Bi) Quantum Well Laser Structures for Reflectance Mode Pulse Oximetry
We explore quantum well laser diodes for applications in pulse oximetry based on two material systems, namely, classical AlGaAs and a rather exotic GaAsBi, with lasing at around 800 nm and 1100 nm, respectively. These spectral regions and material families were selected due to their closely matched...
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MDPI AG
2025-04-01
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| author | Aivaras Špokas Andrea Zelioli Andrius Bičiūnas Bronislovas Čechavičius Justinas Glemža Sandra Pralgauskaitė Mindaugas Kamarauskas Virginijus Bukauskas Janis Spigulis Yi-Jen Chiu Jonas Matukas Renata Butkutė |
| author_facet | Aivaras Špokas Andrea Zelioli Andrius Bičiūnas Bronislovas Čechavičius Justinas Glemža Sandra Pralgauskaitė Mindaugas Kamarauskas Virginijus Bukauskas Janis Spigulis Yi-Jen Chiu Jonas Matukas Renata Butkutė |
| author_sort | Aivaras Špokas |
| collection | DOAJ |
| description | We explore quantum well laser diodes for applications in pulse oximetry based on two material systems, namely, classical AlGaAs and a rather exotic GaAsBi, with lasing at around 800 nm and 1100 nm, respectively. These spectral regions and material families were selected due to their closely matched effective penetration depths into soft tissue. An improved design of the band structure of device active areas was tested on both material systems, yielding enhancement of the two main parameters, namely, output power and threshold current. A maximum emission power of the AlGaAs laser diode was registered at 4.9 mW (I = 60 mA, λ = 801 nm). For the GaAsBi-based devices, the target emission of 1106 nm was measured in pulsed mode with a peak output power of 9.4 mW (I = 3 A). The most optimized structure was based on three GaAsBi quantum wells surrounded by parabolically graded AlGaAs barriers. This structure was capable of 130 mW peak power (I = 2 A, λ = 1025 nm) along with a more than tenfold decrease in threshold current to 250 mA compared to a classical rectangular quantum well active region. |
| format | Article |
| id | doaj-art-c6c2db5ab28d4274b73445bb63c8d988 |
| institution | OA Journals |
| issn | 2072-666X |
| language | English |
| publishDate | 2025-04-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj-art-c6c2db5ab28d4274b73445bb63c8d9882025-08-20T01:56:41ZengMDPI AGMicromachines2072-666X2025-04-0116550610.3390/mi16050506Optimising (Al,Ga) (As,Bi) Quantum Well Laser Structures for Reflectance Mode Pulse OximetryAivaras Špokas0Andrea Zelioli1Andrius Bičiūnas2Bronislovas Čechavičius3Justinas Glemža4Sandra Pralgauskaitė5Mindaugas Kamarauskas6Virginijus Bukauskas7Janis Spigulis8Yi-Jen Chiu9Jonas Matukas10Renata Butkutė11Center for Physical Sciences and Technology, 10257 Vilnius, LithuaniaCenter for Physical Sciences and Technology, 10257 Vilnius, LithuaniaCenter for Physical Sciences and Technology, 10257 Vilnius, LithuaniaCenter for Physical Sciences and Technology, 10257 Vilnius, LithuaniaInstitute of Applied Electrodynamics and Telecommunications, Faculty of Physics, Vilnius University, 10257 Vilnius, LithuaniaInstitute of Applied Electrodynamics and Telecommunications, Faculty of Physics, Vilnius University, 10257 Vilnius, LithuaniaCenter for Physical Sciences and Technology, 10257 Vilnius, LithuaniaCenter for Physical Sciences and Technology, 10257 Vilnius, LithuaniaBiophotonics Laboratory, Institute of Atomic Physics and Spectroscopy, University of Latvia, 1004 Riga, LatviaInstitute of Electro-Optical Engineering, Department of Photonics, National Sun Yat-Sen University, Kaohsiung 804, TaiwanInstitute of Applied Electrodynamics and Telecommunications, Faculty of Physics, Vilnius University, 10257 Vilnius, LithuaniaCenter for Physical Sciences and Technology, 10257 Vilnius, LithuaniaWe explore quantum well laser diodes for applications in pulse oximetry based on two material systems, namely, classical AlGaAs and a rather exotic GaAsBi, with lasing at around 800 nm and 1100 nm, respectively. These spectral regions and material families were selected due to their closely matched effective penetration depths into soft tissue. An improved design of the band structure of device active areas was tested on both material systems, yielding enhancement of the two main parameters, namely, output power and threshold current. A maximum emission power of the AlGaAs laser diode was registered at 4.9 mW (I = 60 mA, λ = 801 nm). For the GaAsBi-based devices, the target emission of 1106 nm was measured in pulsed mode with a peak output power of 9.4 mW (I = 3 A). The most optimized structure was based on three GaAsBi quantum wells surrounded by parabolically graded AlGaAs barriers. This structure was capable of 130 mW peak power (I = 2 A, λ = 1025 nm) along with a more than tenfold decrease in threshold current to 250 mA compared to a classical rectangular quantum well active region.https://www.mdpi.com/2072-666X/16/5/506GaAsBiQW with parabolic graded barrierslaser diode |
| spellingShingle | Aivaras Špokas Andrea Zelioli Andrius Bičiūnas Bronislovas Čechavičius Justinas Glemža Sandra Pralgauskaitė Mindaugas Kamarauskas Virginijus Bukauskas Janis Spigulis Yi-Jen Chiu Jonas Matukas Renata Butkutė Optimising (Al,Ga) (As,Bi) Quantum Well Laser Structures for Reflectance Mode Pulse Oximetry Micromachines GaAsBi QW with parabolic graded barriers laser diode |
| title | Optimising (Al,Ga) (As,Bi) Quantum Well Laser Structures for Reflectance Mode Pulse Oximetry |
| title_full | Optimising (Al,Ga) (As,Bi) Quantum Well Laser Structures for Reflectance Mode Pulse Oximetry |
| title_fullStr | Optimising (Al,Ga) (As,Bi) Quantum Well Laser Structures for Reflectance Mode Pulse Oximetry |
| title_full_unstemmed | Optimising (Al,Ga) (As,Bi) Quantum Well Laser Structures for Reflectance Mode Pulse Oximetry |
| title_short | Optimising (Al,Ga) (As,Bi) Quantum Well Laser Structures for Reflectance Mode Pulse Oximetry |
| title_sort | optimising al ga as bi quantum well laser structures for reflectance mode pulse oximetry |
| topic | GaAsBi QW with parabolic graded barriers laser diode |
| url | https://www.mdpi.com/2072-666X/16/5/506 |
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