Optimising (Al,Ga) (As,Bi) Quantum Well Laser Structures for Reflectance Mode Pulse Oximetry

Optimising (Al,Ga) (As,Bi) Quantum Well Laser Structures for Reflectance Mode Pulse Oximetry

We explore quantum well laser diodes for applications in pulse oximetry based on two material systems, namely, classical AlGaAs and a rather exotic GaAsBi, with lasing at around 800 nm and 1100 nm, respectively. These spectral regions and material families were selected due to their closely matched...

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Bibliographic Details
Main Authors: Aivaras Špokas, Andrea Zelioli, Andrius Bičiūnas, Bronislovas Čechavičius, Justinas Glemža, Sandra Pralgauskaitė, Mindaugas Kamarauskas, Virginijus Bukauskas, Janis Spigulis, Yi-Jen Chiu, Jonas Matukas, Renata Butkutė
Format: Article
Language:English
Published: MDPI AG 2025-04-01
Series:Micromachines
Subjects:
GaAsBi
QW with parabolic graded barriers
laser diode
Online Access:https://www.mdpi.com/2072-666X/16/5/506
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