Epitaxial growth of transition metal nitrides by reactive sputtering
Implementing transition metal nitride (TM-nitride) layers by epitaxy into group-III nitride semiconductor layer structures may solve substantial persisting problems for electronic and optoelectronic device configurations and subsequently enable new device classes in the favorable nitride semiconduct...
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Frontiers Media S.A.
2025-01-01
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| Series: | Frontiers in Materials |
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| Online Access: | https://www.frontiersin.org/articles/10.3389/fmats.2025.1507123/full |
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| author | Florian Hörich Christopher Lüttich Jona Grümbel Jürgen Bläsing Martin Feneberg Armin Dadgar Rüdiger Goldhahn André Strittmatter |
| author_facet | Florian Hörich Christopher Lüttich Jona Grümbel Jürgen Bläsing Martin Feneberg Armin Dadgar Rüdiger Goldhahn André Strittmatter |
| author_sort | Florian Hörich |
| collection | DOAJ |
| description | Implementing transition metal nitride (TM-nitride) layers by epitaxy into group-III nitride semiconductor layer structures may solve substantial persisting problems for electronic and optoelectronic device configurations and subsequently enable new device classes in the favorable nitride semiconductor family. As a prominent example, the integration of the group-III-transition metal nitride AlScN enabled an improved performance of GaN based transistor structures due to stronger polarization fields as has been recently demonstrated. For other transition metal nitrides (TMNs) and their alloys with group-III nitrides a range of other interesting properties is expected to enable novel devices and applications. We investigated the compatibility of TM-nitride layers with the growth of GaN-based structures on silicon substrates. As we show TiN layers are compatible and particularly suited as highly conducting, metallic-like buffer layer enabling true vertical conduction without elaborate backside processing. Also, we demonstrate epitaxial growth of alloys based on ScN and AlN as well as of HfN layers on Si(111) substrates by reactive sputtering using high purity gases and targets. Particularly, we analyzed the crystal structure and the quality of Sc-rich AlxSc1-xN. For HfN layers, we find a unique impact on the growth polarity of MOVPE-grown GaN layers on Si(111) which changes to N-polar growth. This represents a simple and technologically scalable approach for N-polar GaN-based layers on Si substrates. |
| format | Article |
| id | doaj-art-c69d132d25854384af8a6cefab84c588 |
| institution | Kabale University |
| issn | 2296-8016 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Frontiers Media S.A. |
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| series | Frontiers in Materials |
| spelling | doaj-art-c69d132d25854384af8a6cefab84c5882025-01-29T06:46:09ZengFrontiers Media S.A.Frontiers in Materials2296-80162025-01-011210.3389/fmats.2025.15071231507123Epitaxial growth of transition metal nitrides by reactive sputteringFlorian HörichChristopher LüttichJona GrümbelJürgen BläsingMartin FenebergArmin DadgarRüdiger GoldhahnAndré StrittmatterImplementing transition metal nitride (TM-nitride) layers by epitaxy into group-III nitride semiconductor layer structures may solve substantial persisting problems for electronic and optoelectronic device configurations and subsequently enable new device classes in the favorable nitride semiconductor family. As a prominent example, the integration of the group-III-transition metal nitride AlScN enabled an improved performance of GaN based transistor structures due to stronger polarization fields as has been recently demonstrated. For other transition metal nitrides (TMNs) and their alloys with group-III nitrides a range of other interesting properties is expected to enable novel devices and applications. We investigated the compatibility of TM-nitride layers with the growth of GaN-based structures on silicon substrates. As we show TiN layers are compatible and particularly suited as highly conducting, metallic-like buffer layer enabling true vertical conduction without elaborate backside processing. Also, we demonstrate epitaxial growth of alloys based on ScN and AlN as well as of HfN layers on Si(111) substrates by reactive sputtering using high purity gases and targets. Particularly, we analyzed the crystal structure and the quality of Sc-rich AlxSc1-xN. For HfN layers, we find a unique impact on the growth polarity of MOVPE-grown GaN layers on Si(111) which changes to N-polar growth. This represents a simple and technologically scalable approach for N-polar GaN-based layers on Si substrates.https://www.frontiersin.org/articles/10.3389/fmats.2025.1507123/fullsputter epitaxytransition metal nitridesgroup III-nitridesx-ray diffractionvertical GaN on Si electronics |
| spellingShingle | Florian Hörich Christopher Lüttich Jona Grümbel Jürgen Bläsing Martin Feneberg Armin Dadgar Rüdiger Goldhahn André Strittmatter Epitaxial growth of transition metal nitrides by reactive sputtering Frontiers in Materials sputter epitaxy transition metal nitrides group III-nitrides x-ray diffraction vertical GaN on Si electronics |
| title | Epitaxial growth of transition metal nitrides by reactive sputtering |
| title_full | Epitaxial growth of transition metal nitrides by reactive sputtering |
| title_fullStr | Epitaxial growth of transition metal nitrides by reactive sputtering |
| title_full_unstemmed | Epitaxial growth of transition metal nitrides by reactive sputtering |
| title_short | Epitaxial growth of transition metal nitrides by reactive sputtering |
| title_sort | epitaxial growth of transition metal nitrides by reactive sputtering |
| topic | sputter epitaxy transition metal nitrides group III-nitrides x-ray diffraction vertical GaN on Si electronics |
| url | https://www.frontiersin.org/articles/10.3389/fmats.2025.1507123/full |
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