Formation of Silicon Carbide Films by Magnetron Sputtering of Compound Carbon-silicon Target

In the proposed work conventional methods of SiC layers formation and polytypes of this compound have been reviewed. A new methodology of silicon carbide obtaining has been proposed. It is based on magnetron sputtering of compound targets. The optimal geometrical characteristics of the compound targ...

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Bibliographic Details
Main Authors: V.I. Perekrestov, A.S. Kornyushchenko, I.V. Zahaiko
Format: Article
Language:English
Published: Sumy State University 2015-06-01
Series:Журнал нано- та електронної фізики
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Online Access:http://jnep.sumdu.edu.ua/download/numbers/2015/2/articles/jnep_2015_V7_02016.pdf
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