Formation of Silicon Carbide Films by Magnetron Sputtering of Compound Carbon-silicon Target
In the proposed work conventional methods of SiC layers formation and polytypes of this compound have been reviewed. A new methodology of silicon carbide obtaining has been proposed. It is based on magnetron sputtering of compound targets. The optimal geometrical characteristics of the compound targ...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2015-06-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2015/2/articles/jnep_2015_V7_02016.pdf |
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