Unlocking n-type semiconductivity in diamond: A breakthrough approach via surface metal doping
Device applications of ultra-wide bandgap diamond rely on controlled carrier types and concentrations, yet conventional n-type doping in diamond has been challenging due to its strong covalent bonds. Surface charge transfer doping (SCTD) provides an effective alternative, utilizing energy level diff...
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2024-12-01
|
| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0245733 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|