Heteroepitaxial Integration of Mid-Infrared InAsSb Light Emitting Diodes on Silicon

Heteroepitaxial Integration of Mid-Infrared InAsSb Light Emitting Diodes on Silicon

Silicon photonics has emerged as the most promising technology for next-generation compact optoelectronic systems, but further development is still required to achieve efficient and reliable on-chip light sources. Direct epitaxial growth of antimonide-based compound semiconductor materials on silico...

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Bibliographic Details
Main Authors: Evangelia Delli, Peter D. Hodgson, Eva Repiso, Adam P. Craig, Jonathan P. Hayton, Qi Lu, Andrew R. J. Marshall, Anthony Krier, Peter J. Carrington
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Photonics Journal
Subjects:
InAsSb
light emitting diode
mid-infrared
molecular beam epitaxy
silicon photonics
Online Access:https://ieeexplore.ieee.org/document/8693523/
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