AlGaN/GaN-based multi-channel epitaxial structure with an ultra-low 2DEG density and superior carrier transport performance
In this work, the relationship between two-dimensional electron gas (2DEG) density and electron velocity in AlGaN/GaN-based single-channel and multi-channel structures has been studied through I-shape test structure and pulsed I – V measurements. With an optimized epitaxial design, a multi-channel s...
Saved in:
| Main Authors: | , , , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
|
| Series: | Applied Physics Express |
| Subjects: | |
| Online Access: | https://doi.org/10.35848/1882-0786/adc77d |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1849725715026542592 |
|---|---|
| author | Quan Dai Qingru Wang Xinkun Zhang Gaofei Zhi Xinlu Yang Yu Zhou Qian Li Xiaoning Zhan Xin Chen Yaozong Zhong Jianxun Liu Qian Sun Hui Yang |
| author_facet | Quan Dai Qingru Wang Xinkun Zhang Gaofei Zhi Xinlu Yang Yu Zhou Qian Li Xiaoning Zhan Xin Chen Yaozong Zhong Jianxun Liu Qian Sun Hui Yang |
| author_sort | Quan Dai |
| collection | DOAJ |
| description | In this work, the relationship between two-dimensional electron gas (2DEG) density and electron velocity in AlGaN/GaN-based single-channel and multi-channel structures has been studied through I-shape test structure and pulsed I – V measurements. With an optimized epitaxial design, a multi-channel structure with a 2DEG density of 0.65 × 10 ^13 cm ^−2 presents a maximum electron velocity of 1.57 × 10 ^7 cm s ^−1 at 100 kV cm ^−1 , which is 2.4 times higher than that of conventional single-channel structure. This multi-channel structure with an ultra-low 2DEG density is highly suitable for enhanced-mode FinFETs, offering significant potential for radio-frequency mobile terminal applications, such as 5G handsets. |
| format | Article |
| id | doaj-art-c214c4e05ba94c4096cffc4a5dd53326 |
| institution | DOAJ |
| issn | 1882-0786 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Applied Physics Express |
| spelling | doaj-art-c214c4e05ba94c4096cffc4a5dd533262025-08-20T03:10:24ZengIOP PublishingApplied Physics Express1882-07862025-01-0118404400210.35848/1882-0786/adc77dAlGaN/GaN-based multi-channel epitaxial structure with an ultra-low 2DEG density and superior carrier transport performanceQuan Dai0Qingru Wang1Xinkun Zhang2https://orcid.org/0000-0001-6759-8308Gaofei Zhi3Xinlu Yang4Yu Zhou5Qian Li6Xiaoning Zhan7Xin Chen8https://orcid.org/0000-0002-4601-1499Yaozong Zhong9Jianxun Liu10https://orcid.org/0000-0001-8485-166XQian Sun11Hui Yang12Key Laboratory of Semiconductor Display Materials and Chips, Suzhou Institute of Nano-Tech and Nano-Bionics , Chinese Academy of Sciences (CAS), Suzhou 215123, People’s Republic of ChinaKey Laboratory of Semiconductor Display Materials and Chips, Suzhou Institute of Nano-Tech and Nano-Bionics , Chinese Academy of Sciences (CAS), Suzhou 215123, People’s Republic of China; School of Nano-Tech and Nano-Bionics, University of Science and Technology of China (USTC) , Hefei 230026, People’s Republic of ChinaKey Laboratory of Semiconductor Display Materials and Chips, Suzhou Institute of Nano-Tech and Nano-Bionics , Chinese Academy of Sciences (CAS), Suzhou 215123, People’s Republic of China; School of Nano-Tech and Nano-Bionics, University of Science and Technology of China (USTC) , Hefei 230026, People’s Republic of ChinaKey Laboratory of Semiconductor Display Materials and Chips, Suzhou Institute of Nano-Tech and Nano-Bionics , Chinese Academy of Sciences (CAS), Suzhou 215123, People’s Republic of ChinaKey Laboratory of Semiconductor Display Materials and Chips, Suzhou Institute of Nano-Tech and Nano-Bionics , Chinese Academy of Sciences (CAS), Suzhou 215123, People’s Republic of China; School of Nano-Tech and Nano-Bionics, University of Science and Technology of China (USTC) , Hefei 230026, People’s Republic of ChinaKey Laboratory of Semiconductor Display Materials and Chips, Suzhou Institute of Nano-Tech and Nano-Bionics , Chinese Academy of Sciences (CAS), Suzhou 215123, People’s Republic of China; School of Nano-Tech and Nano-Bionics, University of Science and Technology of China (USTC) , Hefei 230026, People’s Republic of ChinaKey Laboratory of Semiconductor Display Materials and Chips, Suzhou Institute of Nano-Tech and Nano-Bionics , Chinese Academy of Sciences (CAS), Suzhou 215123, People’s Republic of China; School of Nano-Tech and Nano-Bionics, University of Science and Technology of China (USTC) , Hefei 230026, People’s Republic of ChinaKey Laboratory of Semiconductor Display Materials and Chips, Suzhou Institute of Nano-Tech and Nano-Bionics , Chinese Academy of Sciences (CAS), Suzhou 215123, People’s Republic of China; School of Nano-Tech and Nano-Bionics, University of Science and Technology of China (USTC) , Hefei 230026, People’s Republic of ChinaKey Laboratory of Semiconductor Display Materials and Chips, Suzhou Institute of Nano-Tech and Nano-Bionics , Chinese Academy of Sciences (CAS), Suzhou 215123, People’s Republic of ChinaKey Laboratory of Semiconductor Display Materials and Chips, Suzhou Institute of Nano-Tech and Nano-Bionics , Chinese Academy of Sciences (CAS), Suzhou 215123, People’s Republic of ChinaKey Laboratory of Semiconductor Display Materials and Chips, Suzhou Institute of Nano-Tech and Nano-Bionics , Chinese Academy of Sciences (CAS), Suzhou 215123, People’s Republic of China; School of Nano-Tech and Nano-Bionics, University of Science and Technology of China (USTC) , Hefei 230026, People’s Republic of ChinaKey Laboratory of Semiconductor Display Materials and Chips, Suzhou Institute of Nano-Tech and Nano-Bionics , Chinese Academy of Sciences (CAS), Suzhou 215123, People’s Republic of China; School of Nano-Tech and Nano-Bionics, University of Science and Technology of China (USTC) , Hefei 230026, People’s Republic of ChinaKey Laboratory of Semiconductor Display Materials and Chips, Suzhou Institute of Nano-Tech and Nano-Bionics , Chinese Academy of Sciences (CAS), Suzhou 215123, People’s Republic of China; School of Nano-Tech and Nano-Bionics, University of Science and Technology of China (USTC) , Hefei 230026, People’s Republic of ChinaIn this work, the relationship between two-dimensional electron gas (2DEG) density and electron velocity in AlGaN/GaN-based single-channel and multi-channel structures has been studied through I-shape test structure and pulsed I – V measurements. With an optimized epitaxial design, a multi-channel structure with a 2DEG density of 0.65 × 10 ^13 cm ^−2 presents a maximum electron velocity of 1.57 × 10 ^7 cm s ^−1 at 100 kV cm ^−1 , which is 2.4 times higher than that of conventional single-channel structure. This multi-channel structure with an ultra-low 2DEG density is highly suitable for enhanced-mode FinFETs, offering significant potential for radio-frequency mobile terminal applications, such as 5G handsets.https://doi.org/10.35848/1882-0786/adc77dgallium nitridemulti-channelultra-low 2DEG densityhigh electron velocitycarrier transoprt |
| spellingShingle | Quan Dai Qingru Wang Xinkun Zhang Gaofei Zhi Xinlu Yang Yu Zhou Qian Li Xiaoning Zhan Xin Chen Yaozong Zhong Jianxun Liu Qian Sun Hui Yang AlGaN/GaN-based multi-channel epitaxial structure with an ultra-low 2DEG density and superior carrier transport performance Applied Physics Express gallium nitride multi-channel ultra-low 2DEG density high electron velocity carrier transoprt |
| title | AlGaN/GaN-based multi-channel epitaxial structure with an ultra-low 2DEG density and superior carrier transport performance |
| title_full | AlGaN/GaN-based multi-channel epitaxial structure with an ultra-low 2DEG density and superior carrier transport performance |
| title_fullStr | AlGaN/GaN-based multi-channel epitaxial structure with an ultra-low 2DEG density and superior carrier transport performance |
| title_full_unstemmed | AlGaN/GaN-based multi-channel epitaxial structure with an ultra-low 2DEG density and superior carrier transport performance |
| title_short | AlGaN/GaN-based multi-channel epitaxial structure with an ultra-low 2DEG density and superior carrier transport performance |
| title_sort | algan gan based multi channel epitaxial structure with an ultra low 2deg density and superior carrier transport performance |
| topic | gallium nitride multi-channel ultra-low 2DEG density high electron velocity carrier transoprt |
| url | https://doi.org/10.35848/1882-0786/adc77d |
| work_keys_str_mv | AT quandai alganganbasedmultichannelepitaxialstructurewithanultralow2degdensityandsuperiorcarriertransportperformance AT qingruwang alganganbasedmultichannelepitaxialstructurewithanultralow2degdensityandsuperiorcarriertransportperformance AT xinkunzhang alganganbasedmultichannelepitaxialstructurewithanultralow2degdensityandsuperiorcarriertransportperformance AT gaofeizhi alganganbasedmultichannelepitaxialstructurewithanultralow2degdensityandsuperiorcarriertransportperformance AT xinluyang alganganbasedmultichannelepitaxialstructurewithanultralow2degdensityandsuperiorcarriertransportperformance AT yuzhou alganganbasedmultichannelepitaxialstructurewithanultralow2degdensityandsuperiorcarriertransportperformance AT qianli alganganbasedmultichannelepitaxialstructurewithanultralow2degdensityandsuperiorcarriertransportperformance AT xiaoningzhan alganganbasedmultichannelepitaxialstructurewithanultralow2degdensityandsuperiorcarriertransportperformance AT xinchen alganganbasedmultichannelepitaxialstructurewithanultralow2degdensityandsuperiorcarriertransportperformance AT yaozongzhong alganganbasedmultichannelepitaxialstructurewithanultralow2degdensityandsuperiorcarriertransportperformance AT jianxunliu alganganbasedmultichannelepitaxialstructurewithanultralow2degdensityandsuperiorcarriertransportperformance AT qiansun alganganbasedmultichannelepitaxialstructurewithanultralow2degdensityandsuperiorcarriertransportperformance AT huiyang alganganbasedmultichannelepitaxialstructurewithanultralow2degdensityandsuperiorcarriertransportperformance |