AlGaN/GaN-based multi-channel epitaxial structure with an ultra-low 2DEG density and superior carrier transport performance

AlGaN/GaN-based multi-channel epitaxial structure with an ultra-low 2DEG density and superior carrier transport performance

In this work, the relationship between two-dimensional electron gas (2DEG) density and electron velocity in AlGaN/GaN-based single-channel and multi-channel structures has been studied through I-shape test structure and pulsed I – V measurements. With an optimized epitaxial design, a multi-channel s...

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Bibliographic Details
Main Authors: Quan Dai, Qingru Wang, Xinkun Zhang, Gaofei Zhi, Xinlu Yang, Yu Zhou, Qian Li, Xiaoning Zhan, Xin Chen, Yaozong Zhong, Jianxun Liu, Qian Sun, Hui Yang
Format: Article
Language:English
Published: IOP Publishing 2025-01-01
Series:Applied Physics Express
Subjects:
gallium nitride
multi-channel
ultra-low 2DEG density
high electron velocity
carrier transoprt
Online Access:https://doi.org/10.35848/1882-0786/adc77d
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https://doi.org/10.35848/1882-0786/adc77d

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