AlGaN/GaN-based multi-channel epitaxial structure with an ultra-low 2DEG density and superior carrier transport performance
In this work, the relationship between two-dimensional electron gas (2DEG) density and electron velocity in AlGaN/GaN-based single-channel and multi-channel structures has been studied through I-shape test structure and pulsed I – V measurements. With an optimized epitaxial design, a multi-channel s...
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| Main Authors: | , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
| Subjects: | |
| Online Access: | https://doi.org/10.35848/1882-0786/adc77d |
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| Summary: | In this work, the relationship between two-dimensional electron gas (2DEG) density and electron velocity in AlGaN/GaN-based single-channel and multi-channel structures has been studied through I-shape test structure and pulsed I – V measurements. With an optimized epitaxial design, a multi-channel structure with a 2DEG density of 0.65 × 10 ^13 cm ^−2 presents a maximum electron velocity of 1.57 × 10 ^7 cm s ^−1 at 100 kV cm ^−1 , which is 2.4 times higher than that of conventional single-channel structure. This multi-channel structure with an ultra-low 2DEG density is highly suitable for enhanced-mode FinFETs, offering significant potential for radio-frequency mobile terminal applications, such as 5G handsets. |
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| ISSN: | 1882-0786 |