Strain-Driven Dewetting and Interdiffusion in SiGe Thin Films on SOI for CMOS-Compatible Nanostructures

Strain-Driven Dewetting and Interdiffusion in SiGe Thin Films on SOI for CMOS-Compatible Nanostructures

This study provides new insight into the mechanisms governing solid state dewetting (SSD) in SiGe alloys and underscores the potential of this bottom-up technique for fabricating self-organized defect-free nanostructures for CMOS-compatible photonic and nanoimprint applications. In particular, we in...

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Bibliographic Details
Main Authors: Sonia Freddi, Michele Gherardi, Andrea Chiappini, Adam Arette-Hourquet, Isabelle Berbezier, Alexey Fedorov, Daniel Chrastina, Monica Bollani
Format: Article
Language:English
Published: MDPI AG 2025-06-01
Series:Nanomaterials
Subjects:
solid state dewetting
silicon germanium
nanoisland
nanostructures
strain relaxation
Mie resonators
Online Access:https://www.mdpi.com/2079-4991/15/13/965
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