Evaluation of Imprint and Multi‐Level Dynamics in Ferroelectric Capacitors

Abstract Fluorite‐structured ferroelectrics are one of the most promising material systems for emerging memory technologies. However, when integrated into electronic devices, these materials exhibit strong imprint effects that can lead to a failure during writing or retention operations. To improve...

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Bibliographic Details
Main Authors: Sara Vecchi, Francesco Maria Puglisi, Pascal Appelt, Roberto Guido, Xuetao Wang, Stefan Slesazeck, Thomas Mikolajick, Suzanne Lancaster
Format: Article
Language:English
Published: Wiley-VCH 2025-02-01
Series:Advanced Electronic Materials
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Online Access:https://doi.org/10.1002/aelm.202400204
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