Efficiency and Droop Improvement in GaN-Based High-Voltage Flip Chip LEDs

The GaN-based high-voltage flip chip light-emitting diode (HVFC-LED) is designed and developed for the purpose of efficiency enhancement. In our design, the distributed Bragg reflector (DBR) is deposited at the bonded substrate to increase the light extraction. After the flip chip process, the gener...

Full description

Saved in:
Bibliographic Details
Main Authors: Yen-Chih Chiang, Bing-Cheng Lin, Kuo-Ju Chen, Sheng-Huan Chiu, Chien-Chung Lin, Po-Tsung Lee, Min-Hsiung Shih, Hao-Chung Kuo
Format: Article
Language:English
Published: Wiley 2014-01-01
Series:International Journal of Photoenergy
Online Access:http://dx.doi.org/10.1155/2014/385257
Tags: Add Tag
No Tags, Be the first to tag this record!
_version_ 1832559858732236800
author Yen-Chih Chiang
Bing-Cheng Lin
Kuo-Ju Chen
Sheng-Huan Chiu
Chien-Chung Lin
Po-Tsung Lee
Min-Hsiung Shih
Hao-Chung Kuo
author_facet Yen-Chih Chiang
Bing-Cheng Lin
Kuo-Ju Chen
Sheng-Huan Chiu
Chien-Chung Lin
Po-Tsung Lee
Min-Hsiung Shih
Hao-Chung Kuo
author_sort Yen-Chih Chiang
collection DOAJ
description The GaN-based high-voltage flip chip light-emitting diode (HVFC-LED) is designed and developed for the purpose of efficiency enhancement. In our design, the distributed Bragg reflector (DBR) is deposited at the bonded substrate to increase the light extraction. After the flip chip process, the general current-voltage characteristics between the flip chip sample and the traditional sample are essentially the same. With the help of great thermal conductive silicon substrate and the bottom DBR, the HVFC-LED is able to enhance the power by 37.1% when compared to the traditional high-voltage LEDs. The wall-plug efficiencies of the HVFC-LED also show good droop reduction as high as 9.9% compared to the traditional devices.
format Article
id doaj-art-c02a57a39ee04cd8ab2ca79f004719ba
institution Kabale University
issn 1110-662X
1687-529X
language English
publishDate 2014-01-01
publisher Wiley
record_format Article
series International Journal of Photoenergy
spelling doaj-art-c02a57a39ee04cd8ab2ca79f004719ba2025-02-03T01:29:03ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2014-01-01201410.1155/2014/385257385257Efficiency and Droop Improvement in GaN-Based High-Voltage Flip Chip LEDsYen-Chih Chiang0Bing-Cheng Lin1Kuo-Ju Chen2Sheng-Huan Chiu3Chien-Chung Lin4Po-Tsung Lee5Min-Hsiung Shih6Hao-Chung Kuo7Institute of Lighting and Energy Photonics, National Chiao Tung University, Tainan 71550, TaiwanDepartment of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, TaiwanDepartment of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, TaiwanDepartment of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, TaiwanInstitute of Photonics System, National Chiao Tung University, Tainan 71550, TaiwanDepartment of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, TaiwanResearch Center for Applied Sciences, Academia Sinica, 128 Academia Road, Sec. 2 Nankang, Taipei 115, TaiwanDepartment of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, TaiwanThe GaN-based high-voltage flip chip light-emitting diode (HVFC-LED) is designed and developed for the purpose of efficiency enhancement. In our design, the distributed Bragg reflector (DBR) is deposited at the bonded substrate to increase the light extraction. After the flip chip process, the general current-voltage characteristics between the flip chip sample and the traditional sample are essentially the same. With the help of great thermal conductive silicon substrate and the bottom DBR, the HVFC-LED is able to enhance the power by 37.1% when compared to the traditional high-voltage LEDs. The wall-plug efficiencies of the HVFC-LED also show good droop reduction as high as 9.9% compared to the traditional devices.http://dx.doi.org/10.1155/2014/385257
spellingShingle Yen-Chih Chiang
Bing-Cheng Lin
Kuo-Ju Chen
Sheng-Huan Chiu
Chien-Chung Lin
Po-Tsung Lee
Min-Hsiung Shih
Hao-Chung Kuo
Efficiency and Droop Improvement in GaN-Based High-Voltage Flip Chip LEDs
International Journal of Photoenergy
title Efficiency and Droop Improvement in GaN-Based High-Voltage Flip Chip LEDs
title_full Efficiency and Droop Improvement in GaN-Based High-Voltage Flip Chip LEDs
title_fullStr Efficiency and Droop Improvement in GaN-Based High-Voltage Flip Chip LEDs
title_full_unstemmed Efficiency and Droop Improvement in GaN-Based High-Voltage Flip Chip LEDs
title_short Efficiency and Droop Improvement in GaN-Based High-Voltage Flip Chip LEDs
title_sort efficiency and droop improvement in gan based high voltage flip chip leds
url http://dx.doi.org/10.1155/2014/385257
work_keys_str_mv AT yenchihchiang efficiencyanddroopimprovementinganbasedhighvoltageflipchipleds
AT bingchenglin efficiencyanddroopimprovementinganbasedhighvoltageflipchipleds
AT kuojuchen efficiencyanddroopimprovementinganbasedhighvoltageflipchipleds
AT shenghuanchiu efficiencyanddroopimprovementinganbasedhighvoltageflipchipleds
AT chienchunglin efficiencyanddroopimprovementinganbasedhighvoltageflipchipleds
AT potsunglee efficiencyanddroopimprovementinganbasedhighvoltageflipchipleds
AT minhsiungshih efficiencyanddroopimprovementinganbasedhighvoltageflipchipleds
AT haochungkuo efficiencyanddroopimprovementinganbasedhighvoltageflipchipleds