Impact of Biasing Effects on Turn-On Switching Transients of GaN Power eHEMTs: Repeatability and Consistency

Impact of Biasing Effects on Turn-On Switching Transients of GaN Power eHEMTs: Repeatability and Consistency

Power electronic designers use I-V device characterization, with source meters and double-pulse testing, to choose devices and to validate the circuit layout of converters. Double pulse testing helps designers predict the performance and efficiency of the final converter, without the cost of high-po...

Full description

Saved in:
Bibliographic Details
Main Authors: Mohammad Hedayati, Harry C. P. Dymond, Saeed Jahdi, Bernard Stark
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Open Journal of Industry Applications
Subjects:
Biasing effects
enhancement-mode high-electron-mobility transistor (eHEMT)
gallium nitride (GaN)
ohmic-gate
Schottky-gate
V<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX">$_{\text{TH}}$</tex-math> </inline-formula>drift
Online Access:https://ieeexplore.ieee.org/document/10999099/
Tags: Add Tag
No Tags, Be the first to tag this record!

Internet

https://ieeexplore.ieee.org/document/10999099/

Similar Items