Implementation and comprehensive investigation of gate engineered Si0.1Ge0.9/GaAs charged plasma based JLTFET for improved analog/ RF performance
This study introduces the Variable Length Dual Dielectric Material-Gate Spacer Engineering Heterostructure Junction-Less Tunnel Field-Effect Transistor (VLDD-GSE-HJLTFET), a novel device that integrates advanced bandgap engineering, dual-dielectric gate configuration, and heterostructure design usin...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-03-01
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| Series: | Results in Engineering |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2590123025001574 |
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