Implementation and comprehensive investigation of gate engineered Si0.1Ge0.9/GaAs charged plasma based JLTFET for improved analog/ RF performance

Implementation and comprehensive investigation of gate engineered Si0.1Ge0.9/GaAs charged plasma based JLTFET for improved analog/ RF performance

This study introduces the Variable Length Dual Dielectric Material-Gate Spacer Engineering Heterostructure Junction-Less Tunnel Field-Effect Transistor (VLDD-GSE-HJLTFET), a novel device that integrates advanced bandgap engineering, dual-dielectric gate configuration, and heterostructure design usin...

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Bibliographic Details
Main Authors: Pranita Soni, Aditya Jain, Kaushal Kumar, Lokesh Kumar Soni, Ajay Kumar, Neha Gupta, Amit Kumar Goyal, Rakesh Saroha
Format: Article
Language:English
Published: Elsevier 2025-03-01
Series:Results in Engineering
Subjects:
JLTFET
Dual-dielectric gate
Heterogeneous material
Charge plasma concept
Band-to-band tunneling
Online Access:http://www.sciencedirect.com/science/article/pii/S2590123025001574
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http://www.sciencedirect.com/science/article/pii/S2590123025001574

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