Memristors Based on Ni(II)‐tetraaza[14]annulene Complexes: Toward an Unconventional Resistive Switching Mechanism

Memristors Based on Ni(II)‐tetraaza[14]annulene Complexes: Toward an Unconventional Resistive Switching Mechanism

Abstract In this work, a family of Ni‐based dibenzotetraaza[14]annulene (dtaa) complexes are investigated for their application in memristors (memory resistors). A series of four Ni(II) complexes with different peripheral substituents of the dtaa ligand are successfully synthesized. Based on these c...

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Main Authors: Andrzej Sławek, Lulu Alluhaibi, Ewelina Kowalewska, Gisya Abdi, Tomasz Mazur, Agnieszka Podborska, Krzysztof Mech, Marianna Marciszko‐Wiąckowska, Alexey Maximenko, Konrad Szaciłowski
Format: Article
Language:English
Published: Wiley-VCH 2024-12-01
Series:Advanced Electronic Materials
Subjects:
annulene complexes
memristor
neuromorphic computing
resistive switching
synaptic plasticity
XAS spectroscopy
Online Access:https://doi.org/10.1002/aelm.202300818
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https://doi.org/10.1002/aelm.202300818

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