Interface trap charges associated reliability analysis of Si/Ge heterojunction dopingless TFET

Interface trap charges associated reliability analysis of Si/Ge heterojunction dopingless TFET

Abstract The interface trap charges (ITC) associated reliability analysis of a charge‐plasma based asymmetric double‐gate (ADG) dopingless tunnel field effect transistor (DLTFET) with Si/Ge heterojunction and high‐κ gate dielectric (HJADGDLTFET) has been studied. The HJADGDLTFET uses silicon at the...

Full description

Saved in:
Bibliographic Details
Main Authors: Suruchi Sharma, Rikmantra Basu, Baljit Kaur
Format: Article
Language:English
Published: Wiley 2021-08-01
Series:IET Circuits, Devices and Systems
Subjects:
Ge‐Si alloys
hafnium compounds
high‐k dielectric thin films
intermodulation distortion
semiconductor device models
semiconductor device reliability
Online Access:https://doi.org/10.1049/cds2.12037
Tags: Add Tag
No Tags, Be the first to tag this record!

Internet

https://doi.org/10.1049/cds2.12037

Similar Items