Crystal structure modulating performances for 213-nm GeO2 solar-blind photodetectors via DC reactive magnetron sputtering method
Abstract Owing to the ultra-wide bandgap energy, high thermal conductivity, and ambipolar capability, GeO2 films are receiving great attention for potential applications in power devices and solar-blind photodetectors. However, the precise control of the crystal structure and optical property is a h...
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Nature Portfolio
2025-02-01
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| Online Access: | https://doi.org/10.1038/s41598-025-86834-x |
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| author | Chengming Wei Jiabao Liu Xinru Lan Cheng Yang Shuiping Huang Dongdong Meng Zhengwei Chen Hongguang Duan Xu Wang |
| author_facet | Chengming Wei Jiabao Liu Xinru Lan Cheng Yang Shuiping Huang Dongdong Meng Zhengwei Chen Hongguang Duan Xu Wang |
| author_sort | Chengming Wei |
| collection | DOAJ |
| description | Abstract Owing to the ultra-wide bandgap energy, high thermal conductivity, and ambipolar capability, GeO2 films are receiving great attention for potential applications in power devices and solar-blind photodetectors. However, the precise control of the crystal structure and optical property is a huge challenge due to close free formation energies of multiple phases, inhibiting the GeO2 based practical device applications. Here, we have fabricated quartz and rutile-GeO2 thin films utilizing the magnetron sputtering based synthetic strategy, which exhibit ultra-wide bandgap energies of 5.51 and 5.88 eV. On the foundation of these ultra-wide bandgap semiconductors, obvious photoresponse characteristics have been achieved at 213 nm and the quartz-GeO2 device exhibits better performances including a short fall time of 148.5 ms, a high photo-dark current ratio of 86.65, large photoresponsivity of 4.56 A/W, and high detectivity of 6.78 × 1013 Jones, which can be attributed to the less oxygen defect exists in the quartz-GeO2 film due to the oxygen-rich growth condition and the better lattice matching with sapphire. Our findings suggest that the GeO2 thin film is a candidate material for optoelectronic device applications and will provide a facile and innovative strategy to develop the solar-blind photodetector. |
| format | Article |
| id | doaj-art-be320e5d3c284967a804d3f764c2865d |
| institution | Kabale University |
| issn | 2045-2322 |
| language | English |
| publishDate | 2025-02-01 |
| publisher | Nature Portfolio |
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| spelling | doaj-art-be320e5d3c284967a804d3f764c2865d2025-02-09T12:28:53ZengNature PortfolioScientific Reports2045-23222025-02-0115111110.1038/s41598-025-86834-xCrystal structure modulating performances for 213-nm GeO2 solar-blind photodetectors via DC reactive magnetron sputtering methodChengming Wei0Jiabao Liu1Xinru Lan2Cheng Yang3Shuiping Huang4Dongdong Meng5Zhengwei Chen6Hongguang Duan7Xu Wang8Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo UniversityDepartment of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo UniversityDepartment of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo UniversityDepartment of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo UniversityDepartment of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo UniversityDepartment of Epitaxy, Beijing MIG Semiconductor Co.,LtdLaboratory of Optoelectronics Materials and Devices, School of Science, Beijing University of Posts and TelecommunicationsDepartment of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo UniversityDepartment of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo UniversityAbstract Owing to the ultra-wide bandgap energy, high thermal conductivity, and ambipolar capability, GeO2 films are receiving great attention for potential applications in power devices and solar-blind photodetectors. However, the precise control of the crystal structure and optical property is a huge challenge due to close free formation energies of multiple phases, inhibiting the GeO2 based practical device applications. Here, we have fabricated quartz and rutile-GeO2 thin films utilizing the magnetron sputtering based synthetic strategy, which exhibit ultra-wide bandgap energies of 5.51 and 5.88 eV. On the foundation of these ultra-wide bandgap semiconductors, obvious photoresponse characteristics have been achieved at 213 nm and the quartz-GeO2 device exhibits better performances including a short fall time of 148.5 ms, a high photo-dark current ratio of 86.65, large photoresponsivity of 4.56 A/W, and high detectivity of 6.78 × 1013 Jones, which can be attributed to the less oxygen defect exists in the quartz-GeO2 film due to the oxygen-rich growth condition and the better lattice matching with sapphire. Our findings suggest that the GeO2 thin film is a candidate material for optoelectronic device applications and will provide a facile and innovative strategy to develop the solar-blind photodetector.https://doi.org/10.1038/s41598-025-86834-xGeO2 filmsMagnetron sputteringUltra-wide bandgap semiconductorsSolar-blind photodetectors |
| spellingShingle | Chengming Wei Jiabao Liu Xinru Lan Cheng Yang Shuiping Huang Dongdong Meng Zhengwei Chen Hongguang Duan Xu Wang Crystal structure modulating performances for 213-nm GeO2 solar-blind photodetectors via DC reactive magnetron sputtering method Scientific Reports GeO2 films Magnetron sputtering Ultra-wide bandgap semiconductors Solar-blind photodetectors |
| title | Crystal structure modulating performances for 213-nm GeO2 solar-blind photodetectors via DC reactive magnetron sputtering method |
| title_full | Crystal structure modulating performances for 213-nm GeO2 solar-blind photodetectors via DC reactive magnetron sputtering method |
| title_fullStr | Crystal structure modulating performances for 213-nm GeO2 solar-blind photodetectors via DC reactive magnetron sputtering method |
| title_full_unstemmed | Crystal structure modulating performances for 213-nm GeO2 solar-blind photodetectors via DC reactive magnetron sputtering method |
| title_short | Crystal structure modulating performances for 213-nm GeO2 solar-blind photodetectors via DC reactive magnetron sputtering method |
| title_sort | crystal structure modulating performances for 213 nm geo2 solar blind photodetectors via dc reactive magnetron sputtering method |
| topic | GeO2 films Magnetron sputtering Ultra-wide bandgap semiconductors Solar-blind photodetectors |
| url | https://doi.org/10.1038/s41598-025-86834-x |
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