Crystal structure modulating performances for 213-nm GeO2 solar-blind photodetectors via DC reactive magnetron sputtering method

Crystal structure modulating performances for 213-nm GeO2 solar-blind photodetectors via DC reactive magnetron sputtering method

Abstract Owing to the ultra-wide bandgap energy, high thermal conductivity, and ambipolar capability, GeO2 films are receiving great attention for potential applications in power devices and solar-blind photodetectors. However, the precise control of the crystal structure and optical property is a h...

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Bibliographic Details
Main Authors: Chengming Wei, Jiabao Liu, Xinru Lan, Cheng Yang, Shuiping Huang, Dongdong Meng, Zhengwei Chen, Hongguang Duan, Xu Wang
Format: Article
Language:English
Published: Nature Portfolio 2025-02-01
Series:Scientific Reports
Subjects:
GeO2 films
Magnetron sputtering
Ultra-wide bandgap semiconductors
Solar-blind photodetectors
Online Access:https://doi.org/10.1038/s41598-025-86834-x
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https://doi.org/10.1038/s41598-025-86834-x

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