Ordinary and Extraordinary Permittivities of 4H SiC at Different Millimeter-Wave Frequencies, Temperatures, and Humidities
Hexagonal semiconductors such as 4H SiC have important high-frequency, high-power, and high-temperature applications. The applications require accurate knowledge of both ordinary and extraordinary relative permittivities, <italic>ϵ</italic><sub>⊥</sub> a...
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2024-01-01
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| author | Tianze Li Lei Li Xiaopeng Wang James C. M. Hwang Shana Yanagimoto Yoshiyuki Yanagimoto |
| author_facet | Tianze Li Lei Li Xiaopeng Wang James C. M. Hwang Shana Yanagimoto Yoshiyuki Yanagimoto |
| author_sort | Tianze Li |
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| description | Hexagonal semiconductors such as 4H SiC have important high-frequency, high-power, and high-temperature applications. The applications require accurate knowledge of both ordinary and extraordinary relative permittivities, <italic>ϵ</italic><sub>⊥</sub> and <italic>ϵ</italic><sub>||</sub>, perpendicular and parallel, respectively, to the c axis of these semiconductors. However, due to challenges for suitable test setups and precision high-frequency measurements, little reliable data exists for these semiconductors especially at millimeter-wave frequencies. Recently, we reported <italic>ϵ</italic><sub>||</sub> of 4H SiC from 110 to 170 GHz. This paper expands on the previous report to include both <italic>ϵ</italic><sub>⊥</sub> and <italic>ϵ</italic><sub>||</sub> of the same material from 55 to 330 GHz, as well as their temperature and humidity dependence enabled by improving the measurement precision to two decimal points. For example, at room temperature, real <italic>ϵ</italic><sub>⊥</sub> and <italic>ϵ</italic><sub>||</sub> are constant at 9.77 ± 0.01 and 10.20 ± 0.05, respectively. By contrast, the ordinary loss tangent increases linearly with the frequency <italic>f</italic> in the form of (4.9 ± 0.1) × 10<sup>−16</sup> <italic>f</italic>. The loss tangent, less than 1 × 10<sup>−4</sup> over most millimeter-wave frequencies, is significantly lower than that of sapphire, our previous low-loss standard. Finally, both <italic>ϵ</italic><sub>⊥</sub> and <italic>ϵ</italic><sub>||</sub> have weak temperature coefficients on the order of 10<sup>−4</sup> /°C. The knowledge reported here is especially critical to millimeter-wave applications of 4H SiC, not only for solid-state devices and circuits, but also as windows for high-power vacuum electronics. |
| format | Article |
| id | doaj-art-bde0f670f1a94d65851acd4f61af3072 |
| institution | Kabale University |
| issn | 2692-8388 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
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| series | IEEE Journal of Microwaves |
| spelling | doaj-art-bde0f670f1a94d65851acd4f61af30722025-01-16T00:02:33ZengIEEEIEEE Journal of Microwaves2692-83882024-01-014466667410.1109/JMW.2024.345332510684839Ordinary and Extraordinary Permittivities of 4H SiC at Different Millimeter-Wave Frequencies, Temperatures, and HumiditiesTianze Li0https://orcid.org/0009-0003-3881-8377Lei Li1https://orcid.org/0000-0002-5949-8654Xiaopeng Wang2https://orcid.org/0000-0003-0384-9758James C. M. Hwang3https://orcid.org/0000-0002-9738-0411Shana Yanagimoto4Yoshiyuki Yanagimoto5https://orcid.org/0000-0003-0871-7877Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USADepartment of Materials Science and Engineering, Cornell University, Ithaca, NY, USADepartment of Materials Science and Engineering, Cornell University, Ithaca, NY, USADepartment of Materials Science and Engineering, Cornell University, Ithaca, NY, USAEM labs, Inc., Kobe, Hyogo, JapanEM labs, Inc., Kobe, Hyogo, JapanHexagonal semiconductors such as 4H SiC have important high-frequency, high-power, and high-temperature applications. The applications require accurate knowledge of both ordinary and extraordinary relative permittivities, <italic>ϵ</italic><sub>⊥</sub> and <italic>ϵ</italic><sub>||</sub>, perpendicular and parallel, respectively, to the c axis of these semiconductors. However, due to challenges for suitable test setups and precision high-frequency measurements, little reliable data exists for these semiconductors especially at millimeter-wave frequencies. Recently, we reported <italic>ϵ</italic><sub>||</sub> of 4H SiC from 110 to 170 GHz. This paper expands on the previous report to include both <italic>ϵ</italic><sub>⊥</sub> and <italic>ϵ</italic><sub>||</sub> of the same material from 55 to 330 GHz, as well as their temperature and humidity dependence enabled by improving the measurement precision to two decimal points. For example, at room temperature, real <italic>ϵ</italic><sub>⊥</sub> and <italic>ϵ</italic><sub>||</sub> are constant at 9.77 ± 0.01 and 10.20 ± 0.05, respectively. By contrast, the ordinary loss tangent increases linearly with the frequency <italic>f</italic> in the form of (4.9 ± 0.1) × 10<sup>−16</sup> <italic>f</italic>. The loss tangent, less than 1 × 10<sup>−4</sup> over most millimeter-wave frequencies, is significantly lower than that of sapphire, our previous low-loss standard. Finally, both <italic>ϵ</italic><sub>⊥</sub> and <italic>ϵ</italic><sub>||</sub> have weak temperature coefficients on the order of 10<sup>−4</sup> /°C. The knowledge reported here is especially critical to millimeter-wave applications of 4H SiC, not only for solid-state devices and circuits, but also as windows for high-power vacuum electronics.https://ieeexplore.ieee.org/document/10684839/Dielectric constantmillimeter wavesubstrate integrated waveguideFabry–Perot resonatorloss tangentpermittivity |
| spellingShingle | Tianze Li Lei Li Xiaopeng Wang James C. M. Hwang Shana Yanagimoto Yoshiyuki Yanagimoto Ordinary and Extraordinary Permittivities of 4H SiC at Different Millimeter-Wave Frequencies, Temperatures, and Humidities IEEE Journal of Microwaves Dielectric constant millimeter wave substrate integrated waveguide Fabry–Perot resonator loss tangent permittivity |
| title | Ordinary and Extraordinary Permittivities of 4H SiC at Different Millimeter-Wave Frequencies, Temperatures, and Humidities |
| title_full | Ordinary and Extraordinary Permittivities of 4H SiC at Different Millimeter-Wave Frequencies, Temperatures, and Humidities |
| title_fullStr | Ordinary and Extraordinary Permittivities of 4H SiC at Different Millimeter-Wave Frequencies, Temperatures, and Humidities |
| title_full_unstemmed | Ordinary and Extraordinary Permittivities of 4H SiC at Different Millimeter-Wave Frequencies, Temperatures, and Humidities |
| title_short | Ordinary and Extraordinary Permittivities of 4H SiC at Different Millimeter-Wave Frequencies, Temperatures, and Humidities |
| title_sort | ordinary and extraordinary permittivities of 4h sic at different millimeter wave frequencies temperatures and humidities |
| topic | Dielectric constant millimeter wave substrate integrated waveguide Fabry–Perot resonator loss tangent permittivity |
| url | https://ieeexplore.ieee.org/document/10684839/ |
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