Ordinary and Extraordinary Permittivities of 4H SiC at Different Millimeter-Wave Frequencies, Temperatures, and Humidities

Ordinary and Extraordinary Permittivities of 4H SiC at Different Millimeter-Wave Frequencies, Temperatures, and Humidities

Hexagonal semiconductors such as 4H SiC have important high-frequency, high-power, and high-temperature applications. The applications require accurate knowledge of both ordinary and extraordinary relative permittivities, <italic>&#x03F5;</italic><sub>&#x22A5;</sub> a...

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Bibliographic Details
Main Authors: Tianze Li, Lei Li, Xiaopeng Wang, James C. M. Hwang, Shana Yanagimoto, Yoshiyuki Yanagimoto
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Journal of Microwaves
Subjects:
Dielectric constant
millimeter wave
substrate integrated waveguide
Fabry–Perot resonator
loss tangent
permittivity
Online Access:https://ieeexplore.ieee.org/document/10684839/
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