Strain Engineering of Anisotropic Electronic, Transport, and Photoelectric Properties in Monolayer Sn<sub>2</sub>Se<sub>2</sub>P<sub>4</sub>

Strain Engineering of Anisotropic Electronic, Transport, and Photoelectric Properties in Monolayer Sn<sub>2</sub>Se<sub>2</sub>P<sub>4</sub>

In this study, we demonstrate that the Sn<sub>2</sub>Se<sub>2</sub>P<sub>4</sub> monolayer exhibits intrinsic anisotropic electronic characteristics with the strain-synergistic modulation of carrier transport and optoelectronic properties, as revealed by various l...

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Bibliographic Details
Main Authors: Haowen Xu, Yuehua Xu
Format: Article
Language:English
Published: MDPI AG 2025-04-01
Series:Nanomaterials
Subjects:
two-dimensional materials
first-principles calculations
strain engineering
electronic properties
carrier transport properties
optoelectronic properties
Online Access:https://www.mdpi.com/2079-4991/15/9/679
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