Performance Enhancement of Planar GaAs Photoconductive Semiconductor Switches by Introducing p-Type Epitaxial Layer

Performance Enhancement of Planar GaAs Photoconductive Semiconductor Switches by Introducing p-Type Epitaxial Layer

Gallium arsenide photoconductive semiconductor switches (GaAs PCSSs) have attracted much attention in pulsed power systems and high-power microwave sources. The quality of ohmic contact has a significant impact on their switching performance. In this article, a 100 nm p-type epitaxial layer and Ti/P...

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Bibliographic Details
Main Authors: Jiawei Zong, Yating Shi, Guang Qian, Jinpeng Wang, Zelu Wei, Yuechan Kong, Jingwen Zhang, Tangsheng Chen
Format: Article
Language:English
Published: MDPI AG 2025-02-01
Series:Photonics
Subjects:
PCSS
ohmic contact
epitaxial layer
high gain
Online Access:https://www.mdpi.com/2304-6732/12/2/152
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