Advances in Gallium Oxide: Properties, Applications, and Future Prospects
Abstract The traditional domination of silicon (Si) in device fabrication is increasingly infiltrated by state‐of‐the‐art wide bandgap semiconductors such as gallium nitride (GaN) and silicon carbide (SiC). However, the performance of these wide bandgap semiconductors has not yet exceeded the optica...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-05-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202400690 |
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