Controllable growth of MoO3 dielectrics with sub-1 nm equivalent oxide thickness for 2D electronics
Abstract The integration of two-dimensional (2D) semiconductors with high-κ dielectrics is critical for the development of post-silicon electronics. The key challenge lies in developing an ultra-thin high-κ dielectric with damage-free interface and sub-1 nm equivalent oxide thickness (EOT) for furth...
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2025-07-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-025-61972-y |
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| author | Xueming Li Shankun Xu Zhengfan Zhang Zhouquan Yu Zhidong Pan Yujue Yang Xubing Lu Nengjie Huo |
| author_facet | Xueming Li Shankun Xu Zhengfan Zhang Zhouquan Yu Zhidong Pan Yujue Yang Xubing Lu Nengjie Huo |
| author_sort | Xueming Li |
| collection | DOAJ |
| description | Abstract The integration of two-dimensional (2D) semiconductors with high-κ dielectrics is critical for the development of post-silicon electronics. The key challenge lies in developing an ultra-thin high-κ dielectric with damage-free interface and sub-1 nm equivalent oxide thickness (EOT) for further continuation of Moore’s law. Here we report the thickness-controlled free-standing growth of layered MoO3 dielectrics with EOT down to 0.9 nm and high permittivity beyond 40, and their application in 2D electronic devices. The MoS2 transistors with MoO3 as high-κ gate dielectric exhibit a high on/off ratio close to 108, low subthreshold swing of 78 mV/dec and low leakage current below 10− 4 A/cm2. By further vertically stacking n-MoS2 with p-WSe2 transistors, the complementary metal-oxide-semiconductor (CMOS) inverters are achieved, demonstrating its application potential in high-density digital logical circuits. This work develops the controllable growth of high-κ MoO3 dielectrics with ultra-thin EOT, advancing the development of high-performance, size-shrinking and low-power 2D electronics. |
| format | Article |
| id | doaj-art-b9fa5b10ec5a4ef1ac4822dcac77955a |
| institution | Kabale University |
| issn | 2041-1723 |
| language | English |
| publishDate | 2025-07-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj-art-b9fa5b10ec5a4ef1ac4822dcac77955a2025-08-20T04:02:54ZengNature PortfolioNature Communications2041-17232025-07-011611810.1038/s41467-025-61972-yControllable growth of MoO3 dielectrics with sub-1 nm equivalent oxide thickness for 2D electronicsXueming Li0Shankun Xu1Zhengfan Zhang2Zhouquan Yu3Zhidong Pan4Yujue Yang5Xubing Lu6Nengjie Huo7Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Electronic Science and Engineering (School of Microelectronics), South China Normal UniversityGuangdong Provincial Key Laboratory of Chip and Integration Technology, School of Electronic Science and Engineering (School of Microelectronics), South China Normal UniversityGuangdong Provincial Key Laboratory of Chip and Integration Technology, School of Electronic Science and Engineering (School of Microelectronics), South China Normal UniversitySchool of South China Academy of Advanced Optoelectronics, South China Normal UniversityGuangdong Provincial Key Laboratory of Chip and Integration Technology, School of Electronic Science and Engineering (School of Microelectronics), South China Normal UniversitySchool of Physics and Optoelectronic Engineering, Guangdong University of TechnologySchool of South China Academy of Advanced Optoelectronics, South China Normal UniversityGuangdong Provincial Key Laboratory of Chip and Integration Technology, School of Electronic Science and Engineering (School of Microelectronics), South China Normal UniversityAbstract The integration of two-dimensional (2D) semiconductors with high-κ dielectrics is critical for the development of post-silicon electronics. The key challenge lies in developing an ultra-thin high-κ dielectric with damage-free interface and sub-1 nm equivalent oxide thickness (EOT) for further continuation of Moore’s law. Here we report the thickness-controlled free-standing growth of layered MoO3 dielectrics with EOT down to 0.9 nm and high permittivity beyond 40, and their application in 2D electronic devices. The MoS2 transistors with MoO3 as high-κ gate dielectric exhibit a high on/off ratio close to 108, low subthreshold swing of 78 mV/dec and low leakage current below 10− 4 A/cm2. By further vertically stacking n-MoS2 with p-WSe2 transistors, the complementary metal-oxide-semiconductor (CMOS) inverters are achieved, demonstrating its application potential in high-density digital logical circuits. This work develops the controllable growth of high-κ MoO3 dielectrics with ultra-thin EOT, advancing the development of high-performance, size-shrinking and low-power 2D electronics.https://doi.org/10.1038/s41467-025-61972-y |
| spellingShingle | Xueming Li Shankun Xu Zhengfan Zhang Zhouquan Yu Zhidong Pan Yujue Yang Xubing Lu Nengjie Huo Controllable growth of MoO3 dielectrics with sub-1 nm equivalent oxide thickness for 2D electronics Nature Communications |
| title | Controllable growth of MoO3 dielectrics with sub-1 nm equivalent oxide thickness for 2D electronics |
| title_full | Controllable growth of MoO3 dielectrics with sub-1 nm equivalent oxide thickness for 2D electronics |
| title_fullStr | Controllable growth of MoO3 dielectrics with sub-1 nm equivalent oxide thickness for 2D electronics |
| title_full_unstemmed | Controllable growth of MoO3 dielectrics with sub-1 nm equivalent oxide thickness for 2D electronics |
| title_short | Controllable growth of MoO3 dielectrics with sub-1 nm equivalent oxide thickness for 2D electronics |
| title_sort | controllable growth of moo3 dielectrics with sub 1 nm equivalent oxide thickness for 2d electronics |
| url | https://doi.org/10.1038/s41467-025-61972-y |
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