Controllable growth of MoO3 dielectrics with sub-1 nm equivalent oxide thickness for 2D electronics
Abstract The integration of two-dimensional (2D) semiconductors with high-κ dielectrics is critical for the development of post-silicon electronics. The key challenge lies in developing an ultra-thin high-κ dielectric with damage-free interface and sub-1 nm equivalent oxide thickness (EOT) for furth...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-07-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-025-61972-y |
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