Researches of the Internal Mechanical Stresses Arising in Si-SiO2-PZT Structures

The investigations directed on identification of growth mechanisms of ferroelectric thin films of lead zirconate titanate (PZT) on the oxidized silicon substrates are described in the work. It is shown that the growth rate of a ferroelectric film is equal to about 15-18 nm/min, and films are formed...

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Main Authors: D.A. Kovalenko, V.V. Petrov
Format: Article
Language:English
Published: Sumy State University 2015-10-01
Series:Журнал нано- та електронної фізики
Subjects:
Online Access:http://jnep.sumdu.edu.ua/download/numbers/2015/3/articles/jnep_2015_V7_03036.pdf
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author D.A. Kovalenko
V.V. Petrov
author_facet D.A. Kovalenko
V.V. Petrov
author_sort D.A. Kovalenko
collection DOAJ
description The investigations directed on identification of growth mechanisms of ferroelectric thin films of lead zirconate titanate (PZT) on the oxidized silicon substrates are described in the work. It is shown that the growth rate of a ferroelectric film is equal to about 15-18 nm/min, and films are formed by the Stransky-Krastanov mechanism. Results of the theoretical study of the internal mechanical stresses arising because of the difference in the coefficients of thermal expansion of materials of a silicon substrate, oxidized silicon underlayer and a PZT film are given. Results of the pilot studies of internal mechanical stresses which coincide with the calculated results in the thickness range of PZT films of 100-300 nm are presented.
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spelling doaj-art-b9e24a7cef68475ba44e9c97f1bb61ae2025-08-20T02:00:29ZengSumy State UniversityЖурнал нано- та електронної фізики2077-67722015-10-017303036-103036-6Researches of the Internal Mechanical Stresses Arising in Si-SiO2-PZT StructuresD.A. Kovalenko0V.V. Petrov1South Federal University, 2, Chekhova Str., 347900 Taganrog, RussiaSouth Federal University, 2, Chekhova Str., 347900 Taganrog, RussiaThe investigations directed on identification of growth mechanisms of ferroelectric thin films of lead zirconate titanate (PZT) on the oxidized silicon substrates are described in the work. It is shown that the growth rate of a ferroelectric film is equal to about 15-18 nm/min, and films are formed by the Stransky-Krastanov mechanism. Results of the theoretical study of the internal mechanical stresses arising because of the difference in the coefficients of thermal expansion of materials of a silicon substrate, oxidized silicon underlayer and a PZT film are given. Results of the pilot studies of internal mechanical stresses which coincide with the calculated results in the thickness range of PZT films of 100-300 nm are presented.http://jnep.sumdu.edu.ua/download/numbers/2015/3/articles/jnep_2015_V7_03036.pdfMechanical stressesFerroelectric filmsSilicon substrateZirconate titanateMechanisms of growth of film
spellingShingle D.A. Kovalenko
V.V. Petrov
Researches of the Internal Mechanical Stresses Arising in Si-SiO2-PZT Structures
Журнал нано- та електронної фізики
Mechanical stresses
Ferroelectric films
Silicon substrate
Zirconate titanate
Mechanisms of growth of film
title Researches of the Internal Mechanical Stresses Arising in Si-SiO2-PZT Structures
title_full Researches of the Internal Mechanical Stresses Arising in Si-SiO2-PZT Structures
title_fullStr Researches of the Internal Mechanical Stresses Arising in Si-SiO2-PZT Structures
title_full_unstemmed Researches of the Internal Mechanical Stresses Arising in Si-SiO2-PZT Structures
title_short Researches of the Internal Mechanical Stresses Arising in Si-SiO2-PZT Structures
title_sort researches of the internal mechanical stresses arising in si sio2 pzt structures
topic Mechanical stresses
Ferroelectric films
Silicon substrate
Zirconate titanate
Mechanisms of growth of film
url http://jnep.sumdu.edu.ua/download/numbers/2015/3/articles/jnep_2015_V7_03036.pdf
work_keys_str_mv AT dakovalenko researchesoftheinternalmechanicalstressesarisinginsisio2pztstructures
AT vvpetrov researchesoftheinternalmechanicalstressesarisinginsisio2pztstructures