Researches of the Internal Mechanical Stresses Arising in Si-SiO2-PZT Structures

The investigations directed on identification of growth mechanisms of ferroelectric thin films of lead zirconate titanate (PZT) on the oxidized silicon substrates are described in the work. It is shown that the growth rate of a ferroelectric film is equal to about 15-18 nm/min, and films are formed...

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Bibliographic Details
Main Authors: D.A. Kovalenko, V.V. Petrov
Format: Article
Language:English
Published: Sumy State University 2015-10-01
Series:Журнал нано- та електронної фізики
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Online Access:http://jnep.sumdu.edu.ua/download/numbers/2015/3/articles/jnep_2015_V7_03036.pdf
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