Stabilizing Schottky‐to‐Ohmic Switching in HfO2‐Based Ferroelectric Films via Electrode Design

Stabilizing Schottky‐to‐Ohmic Switching in HfO2‐Based Ferroelectric Films via Electrode Design

Abstract The discovery of ferroelectric phases in HfO2‐based films has reignited interest in ferroelectrics and their application in resistive switching (RS) devices. This study investigates the pivotal role of electrodes in facilitating the Schottky‐to‐Ohmic transition (SOT) observed in devices con...

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Bibliographic Details
Main Authors: Moritz L. Müller, Nives Strkalj, Maximilian T. Becker, Megan O. Hill, Ji Soo Kim, Dibya Phuyal, Simon M. Fairclough, Caterina Ducati, Judith L. MacManus‐Driscoll
Format: Article
Language:English
Published: Wiley 2025-02-01
Series:Advanced Science
Subjects:
electrochemistry
ferroelectricity
hafnia
interfaces
resistive switching
Online Access:https://doi.org/10.1002/advs.202409566
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https://doi.org/10.1002/advs.202409566

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