Gallium Nitride High-Electron-Mobility Transistor-Based High-Energy Particle-Detection Preamplifier
GaN High-Electron-Mobility Transistors have gained some foothold in the power-electronics industry. This is due to wide frequency bandwidth and power handling. Gallium Nitride offers a wide bandgap and higher critical field strength compared to most wide-bandgap semiconductors, resulting in better r...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-04-01
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| Series: | Metrology |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2673-8244/5/2/21 |
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