Analytical Implementation of Electron–Phonon Scattering in a Schottky Barrier CNTFET Model
This paper elaborates on the proposal of a new analytical model for a non-ballistic transport scenario for Schottky barrier carbon nanotube field effect transistors (SB-CNTFETs). The non-ballistic transport scenario depends on incorporating the effects of acoustic phonon (A-Ph) and optical phonon (O...
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2025-05-01
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| author | Ibrahim L. Abdalla Fatma A. Matter Ahmed A. Afifi Mohamed I. Ibrahem Hesham F. A. Hamed Eslam S. El-Mokadem |
| author_facet | Ibrahim L. Abdalla Fatma A. Matter Ahmed A. Afifi Mohamed I. Ibrahem Hesham F. A. Hamed Eslam S. El-Mokadem |
| author_sort | Ibrahim L. Abdalla |
| collection | DOAJ |
| description | This paper elaborates on the proposal of a new analytical model for a non-ballistic transport scenario for Schottky barrier carbon nanotube field effect transistors (SB-CNTFETs). The non-ballistic transport scenario depends on incorporating the effects of acoustic phonon (A-Ph) and optical phonon (O-Ph) electron scattering mechanisms. The analytical model is rooted in the solution of the Landauer integral equation, which is modified to account for non-ballistic transport through a set of approximations applied to the Wentzel–Kramers–Brillouin (WKB) transmission probability and the Fermi–Dirac distribution function. Our proposed model was simulated to evaluate the total current and transconductance, considering scenarios both with and without the electron–phonon scattering effect. The simulation results revealed a substantial decrease of approximately 78.6% in both total current and transconductance due to electron–phonon scattering. In addition, we investigated the impact of acoustic phonon (A-Ph) and optical phonon (O-Ph) scattering on the drain current under various conditions, including different temperatures, gate lengths, and nanotube chiralities. This comprehensive analysis helps in understanding how these parameters influence device performance. Compared with experimental data, the model’s simulation results demonstrate a high degree of agreement. Furthermore, our fully analytical model achieves a significantly faster runtime, clocking in at around 2.726 s. This validation underscores the model’s accuracy and reliability in predicting the behavior of SB-CNTFETs under non-ballistic conditions. |
| format | Article |
| id | doaj-art-b6e943afd9e8487ead5e0d0748d7bbbd |
| institution | Kabale University |
| issn | 2079-9268 |
| language | English |
| publishDate | 2025-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Journal of Low Power Electronics and Applications |
| spelling | doaj-art-b6e943afd9e8487ead5e0d0748d7bbbd2025-08-20T03:27:33ZengMDPI AGJournal of Low Power Electronics and Applications2079-92682025-05-011522810.3390/jlpea15020028Analytical Implementation of Electron–Phonon Scattering in a Schottky Barrier CNTFET ModelIbrahim L. Abdalla0Fatma A. Matter1Ahmed A. Afifi2Mohamed I. Ibrahem3Hesham F. A. Hamed4Eslam S. El-Mokadem5Department of Electronics and Communications Engineering, Zagazig University, Zagazig 44519, EgyptDepartment of Electronics and Communication Engineering, Higher Technological Institute, 10th of Ramadan City 44629, EgyptDepartment of Electronics and Communication Engineering, Higher Technological Institute, 10th of Ramadan City 44629, EgyptSchool of Computer and Cyber Sciences, Augusta University, Augusta, GA 30912, USAElectrical Engineering Department, Faculty of Engineering, Minia University, Minya 61519, EgyptDepartment of Electronics and Communication Engineering, Higher Technological Institute, 10th of Ramadan City 44629, EgyptThis paper elaborates on the proposal of a new analytical model for a non-ballistic transport scenario for Schottky barrier carbon nanotube field effect transistors (SB-CNTFETs). The non-ballistic transport scenario depends on incorporating the effects of acoustic phonon (A-Ph) and optical phonon (O-Ph) electron scattering mechanisms. The analytical model is rooted in the solution of the Landauer integral equation, which is modified to account for non-ballistic transport through a set of approximations applied to the Wentzel–Kramers–Brillouin (WKB) transmission probability and the Fermi–Dirac distribution function. Our proposed model was simulated to evaluate the total current and transconductance, considering scenarios both with and without the electron–phonon scattering effect. The simulation results revealed a substantial decrease of approximately 78.6% in both total current and transconductance due to electron–phonon scattering. In addition, we investigated the impact of acoustic phonon (A-Ph) and optical phonon (O-Ph) scattering on the drain current under various conditions, including different temperatures, gate lengths, and nanotube chiralities. This comprehensive analysis helps in understanding how these parameters influence device performance. Compared with experimental data, the model’s simulation results demonstrate a high degree of agreement. Furthermore, our fully analytical model achieves a significantly faster runtime, clocking in at around 2.726 s. This validation underscores the model’s accuracy and reliability in predicting the behavior of SB-CNTFETs under non-ballistic conditions.https://www.mdpi.com/2079-9268/15/2/28CNTFETanalytical modelnon-ballisticcarbon nanotubeoptical phononacoustic phonon |
| spellingShingle | Ibrahim L. Abdalla Fatma A. Matter Ahmed A. Afifi Mohamed I. Ibrahem Hesham F. A. Hamed Eslam S. El-Mokadem Analytical Implementation of Electron–Phonon Scattering in a Schottky Barrier CNTFET Model Journal of Low Power Electronics and Applications CNTFET analytical model non-ballistic carbon nanotube optical phonon acoustic phonon |
| title | Analytical Implementation of Electron–Phonon Scattering in a Schottky Barrier CNTFET Model |
| title_full | Analytical Implementation of Electron–Phonon Scattering in a Schottky Barrier CNTFET Model |
| title_fullStr | Analytical Implementation of Electron–Phonon Scattering in a Schottky Barrier CNTFET Model |
| title_full_unstemmed | Analytical Implementation of Electron–Phonon Scattering in a Schottky Barrier CNTFET Model |
| title_short | Analytical Implementation of Electron–Phonon Scattering in a Schottky Barrier CNTFET Model |
| title_sort | analytical implementation of electron phonon scattering in a schottky barrier cntfet model |
| topic | CNTFET analytical model non-ballistic carbon nanotube optical phonon acoustic phonon |
| url | https://www.mdpi.com/2079-9268/15/2/28 |
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