Analytical Implementation of Electron–Phonon Scattering in a Schottky Barrier CNTFET Model

Analytical Implementation of Electron–Phonon Scattering in a Schottky Barrier CNTFET Model

This paper elaborates on the proposal of a new analytical model for a non-ballistic transport scenario for Schottky barrier carbon nanotube field effect transistors (SB-CNTFETs). The non-ballistic transport scenario depends on incorporating the effects of acoustic phonon (A-Ph) and optical phonon (O...

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Bibliographic Details
Main Authors: Ibrahim L. Abdalla, Fatma A. Matter, Ahmed A. Afifi, Mohamed I. Ibrahem, Hesham F. A. Hamed, Eslam S. El-Mokadem
Format: Article
Language:English
Published: MDPI AG 2025-05-01
Series:Journal of Low Power Electronics and Applications
Subjects:
CNTFET
analytical model
non-ballistic
carbon nanotube
optical phonon
acoustic phonon
Online Access:https://www.mdpi.com/2079-9268/15/2/28
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