Enhanced high-energy proton radiation hardness of ZnO thin-film transistors with a passivation layer
Abstract Metal-oxide thin-film semiconductors have been highlighted as next-generation space semiconductors owing to their excellent radiation hardness based on their dimensional advantages of very low thickness and insensitivity to crystal structure. However, thin-film transistors (TFTs) do not exh...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2025-01-01
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| Series: | Nano Convergence |
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| Online Access: | https://doi.org/10.1186/s40580-025-00474-5 |
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| author | Yongsu Lee Hae-Won Lee Su Jin Kim Jeong Min Park Byoung Hun Lee Chang Goo Kang |
| author_facet | Yongsu Lee Hae-Won Lee Su Jin Kim Jeong Min Park Byoung Hun Lee Chang Goo Kang |
| author_sort | Yongsu Lee |
| collection | DOAJ |
| description | Abstract Metal-oxide thin-film semiconductors have been highlighted as next-generation space semiconductors owing to their excellent radiation hardness based on their dimensional advantages of very low thickness and insensitivity to crystal structure. However, thin-film transistors (TFTs) do not exhibit intrinsic radiation hardness owing to the chemical reactions at the interface exposed to ambient air. In this study, significantly enhanced radiation hardness of Al2O3-passivated ZnO TFTs against high-energy protons with energies of up to 100 MeV is obtained owing to the passivation layer blocking interactions with external reactants, thereby maintaining the chemical stability of the thin-film semiconductor. These results highlight the potential of passivated metal-oxide thin films for developing reliable radiation-hardened semiconductor devices that can be used in harsh space environments. In addition, the relationship between low-frequency noise and defects due to oxygen vacancies was revealed, which can be utilized to improve device reliability. |
| format | Article |
| id | doaj-art-b6a3438877964028a1d79b22375aadfc |
| institution | Kabale University |
| issn | 2196-5404 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nano Convergence |
| spelling | doaj-art-b6a3438877964028a1d79b22375aadfc2025-02-02T12:36:39ZengSpringerOpenNano Convergence2196-54042025-01-0112111010.1186/s40580-025-00474-5Enhanced high-energy proton radiation hardness of ZnO thin-film transistors with a passivation layerYongsu Lee0Hae-Won Lee1Su Jin Kim2Jeong Min Park3Byoung Hun Lee4Chang Goo Kang5Advanced Radiation Technology Institute, Korea Atomic Energy Research InstituteCenter for Semiconductor Technology Convergence, Department of Electrical Engineering, Pohang University of Science and TechnologyAdvanced Radiation Technology Institute, Korea Atomic Energy Research InstituteAdvanced Radiation Technology Institute, Korea Atomic Energy Research InstituteCenter for Semiconductor Technology Convergence, Department of Electrical Engineering, Pohang University of Science and TechnologyAdvanced Radiation Technology Institute, Korea Atomic Energy Research InstituteAbstract Metal-oxide thin-film semiconductors have been highlighted as next-generation space semiconductors owing to their excellent radiation hardness based on their dimensional advantages of very low thickness and insensitivity to crystal structure. However, thin-film transistors (TFTs) do not exhibit intrinsic radiation hardness owing to the chemical reactions at the interface exposed to ambient air. In this study, significantly enhanced radiation hardness of Al2O3-passivated ZnO TFTs against high-energy protons with energies of up to 100 MeV is obtained owing to the passivation layer blocking interactions with external reactants, thereby maintaining the chemical stability of the thin-film semiconductor. These results highlight the potential of passivated metal-oxide thin films for developing reliable radiation-hardened semiconductor devices that can be used in harsh space environments. In addition, the relationship between low-frequency noise and defects due to oxygen vacancies was revealed, which can be utilized to improve device reliability.https://doi.org/10.1186/s40580-025-00474-5Radiation hardeningProton irradiationThin-film semiconductorZnOPassivation |
| spellingShingle | Yongsu Lee Hae-Won Lee Su Jin Kim Jeong Min Park Byoung Hun Lee Chang Goo Kang Enhanced high-energy proton radiation hardness of ZnO thin-film transistors with a passivation layer Nano Convergence Radiation hardening Proton irradiation Thin-film semiconductor ZnO Passivation |
| title | Enhanced high-energy proton radiation hardness of ZnO thin-film transistors with a passivation layer |
| title_full | Enhanced high-energy proton radiation hardness of ZnO thin-film transistors with a passivation layer |
| title_fullStr | Enhanced high-energy proton radiation hardness of ZnO thin-film transistors with a passivation layer |
| title_full_unstemmed | Enhanced high-energy proton radiation hardness of ZnO thin-film transistors with a passivation layer |
| title_short | Enhanced high-energy proton radiation hardness of ZnO thin-film transistors with a passivation layer |
| title_sort | enhanced high energy proton radiation hardness of zno thin film transistors with a passivation layer |
| topic | Radiation hardening Proton irradiation Thin-film semiconductor ZnO Passivation |
| url | https://doi.org/10.1186/s40580-025-00474-5 |
| work_keys_str_mv | AT yongsulee enhancedhighenergyprotonradiationhardnessofznothinfilmtransistorswithapassivationlayer AT haewonlee enhancedhighenergyprotonradiationhardnessofznothinfilmtransistorswithapassivationlayer AT sujinkim enhancedhighenergyprotonradiationhardnessofznothinfilmtransistorswithapassivationlayer AT jeongminpark enhancedhighenergyprotonradiationhardnessofznothinfilmtransistorswithapassivationlayer AT byounghunlee enhancedhighenergyprotonradiationhardnessofznothinfilmtransistorswithapassivationlayer AT changgookang enhancedhighenergyprotonradiationhardnessofznothinfilmtransistorswithapassivationlayer |