Enhanced high-energy proton radiation hardness of ZnO thin-film transistors with a passivation layer

Abstract Metal-oxide thin-film semiconductors have been highlighted as next-generation space semiconductors owing to their excellent radiation hardness based on their dimensional advantages of very low thickness and insensitivity to crystal structure. However, thin-film transistors (TFTs) do not exh...

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Bibliographic Details
Main Authors: Yongsu Lee, Hae-Won Lee, Su Jin Kim, Jeong Min Park, Byoung Hun Lee, Chang Goo Kang
Format: Article
Language:English
Published: SpringerOpen 2025-01-01
Series:Nano Convergence
Subjects:
Online Access:https://doi.org/10.1186/s40580-025-00474-5
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