Enhanced high-energy proton radiation hardness of ZnO thin-film transistors with a passivation layer
Abstract Metal-oxide thin-film semiconductors have been highlighted as next-generation space semiconductors owing to their excellent radiation hardness based on their dimensional advantages of very low thickness and insensitivity to crystal structure. However, thin-film transistors (TFTs) do not exh...
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Main Authors: | , , , , , |
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Format: | Article |
Language: | English |
Published: |
SpringerOpen
2025-01-01
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Series: | Nano Convergence |
Subjects: | |
Online Access: | https://doi.org/10.1186/s40580-025-00474-5 |
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